Allicdata Part #: | 70V08S20PFI-ND |
Manufacturer Part#: |
70V08S20PFI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IDT, Integrated Device Technology Inc |
Short Description: | IC SRAM 512K PARALLEL 100TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 512Kb (64... |
DataSheet: | 70V08S20PFI Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 512Kb (64K x 8) |
Write Cycle Time - Word, Page: | 20ns |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x14) |
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Memory
The 70V08S20PFI is a low power, high performance, non-volatile memory device, which has a wide range of applications in consumer and industrial electronics. It is a type of non-volatile Static RAM (SRAM) that uses ferroelectric memory cells, which can store data without power, even when power is turned off. The 70V08S20PFI is made up of an array of ferroelectric cells which can be programmed to store up to 8bits of data. The ferroelectric cells are stacked in an array, which is arranged in a vertical or horizontal manner, depending on the package size.
Application Field
The 70V08S20PFI is used in a wide range of applications, including consumer electronics, automotive electronics, industrial appliances, medical equipment, and aerospace and defense systems. This memory device is used in many embedded and portable applications, due to its low power requirements and high performance. It is also used in many smart card and other identification products, such as RFID tags, smart cards, and key cards. The 70V08S20PFI is also used for secure data storage, as it is resistant to tampering and hacking.
Working Principle
The ferroelectric cells of the 70V08S20PFI operate by taking advantage of the change in the pyroelectric (heat sensitive) properties of ferroelectrics. This property of ferroelectrics allows you to write and read data. When voltage is applied across the ferroelectric cell, it changes its crystal state and can store the data. This makes the 70V08S20PFI non-volatile and capable of retaining data even when the power is turned off. The cell then reverts to its original state when the voltage is removed. This reversibility is the basis of how ferroelectric memory works. The 70V08S20PFI is highly reliable, as it utilizes ferroelectric cells which do not wear out or require refreshing. It is also low power consuming, as the ferroelectric cells require low voltages to write and read data.
The 70V08S20PFI is widely used for its low power consumption and high performance in various applications. Its ease of use, high reliability and wide availability make it an ideal choice for a range of applications. With its low power requirements and long lifespans, the memory device is ideal for all sorts of embedded, mobile, and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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