Allicdata Part #: | FF650R17IE4PBOSA1-ND |
Manufacturer Part#: |
FF650R17IE4PBOSA1 |
Price: | $ 351.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1700V 650A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 1700V ... |
DataSheet: | FF650R17IE4PBOSA1 Datasheet/PDF |
Quantity: | 1000 |
3 +: | $ 319.67700 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 650A |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 650A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 54nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Transistors - IGBTs - Modules
FF650R17IE4PBOSA1 is a reliable and widely used module with a maximum current rating of 650 A and a voltage rating of 1,700 V. It is used in various applications ranging from motor drives and power supplies to renewable energy systems. The module is made up of Insulated Gate Bipolar Transistors (IGBTs). IGBTs are power semiconductor devices that are used to control the flow of electrical power. They combine the best features of bi-polar transistors and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and provide the user with high efficiency, low power consumption and easy heat dissipation.
The FF650R17IE4PBOSA1 module has two modes of operation: linear and switched. The linear mode is used to control a load current within a certain range, while the switched mode is used to provide a more accurate control of the current. The module can be used to control different types of loads such as DC motors, AC motors, transformers, and adjustable-speed drives.
The working principle of the FF650R17IE4PBOSA1 module is based on the principles of IGBTs. IGBTs consist of two main components: a MOSFET and a thyristor. The MOSFET acts as an input gate with the thyristor function as the output. To forward bias the thyristor, a gate signal is used. When a gate signal of sufficient magnitude is applied, an electric field is created between the gate and the cathode of the thyristor. This electric field causes electrons to be pushed through the gate, into the drain and the source, where the electrons are picked up by the gate and injected into the thyristor. This, in turn, causes conduction between the drain and the source, thus allowing current to flow between them.
The FF650R17IE4PBOSA1 module is designed to provide a high-performance solution for demanding applications. It is built to provide reliable and consistent performance, while at the same time keep operating costs low. The module is designed with a low conduction low-emission MOSFET that has a low gate threshold voltage and an easy heat dissipation capability. In addition, it is equipped with a fast diode protection feature that prevents surges and other problems that can damage the module and its components.
The FF650R17IE4PBOSA1 module offers a cost-effective and efficient solution for applications such as motor drives and power supplies, renewable energy systems, DC-DC converters, AC power supplies and other power applications. Its versatile design and low power consumption make it suitable for a variety of applications. Its ability to provide reliable performance and low operating costs makes it an ideal choice for a variety of power systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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FF650R17IE4BOSA1 | Infineon Tec... | 328.99 $ | 1000 | IGBT MODULE VCES 1700V 65... |
FF650R17IE4PBOSA1 | Infineon Tec... | 351.64 $ | 1000 | IGBT MODULE VCES 1700V 65... |
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