Allicdata Part #: | FF650R17IE4VBOSA1-ND |
Manufacturer Part#: |
FF650R17IE4VBOSA1 |
Price: | $ 374.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1700V 650A |
More Detail: | IGBT Module 2 Independent 1700V 4150W Chassis Mo... |
DataSheet: | FF650R17IE4VBOSA1 Datasheet/PDF |
Quantity: | 1000 |
3 +: | $ 340.44400 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Power - Max: | 4150W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 650A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 54nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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IGBT stands for “Insulated Gate Bipolar Transistors”. FF650R17IE4VBOSA1 is one type of IGBT that is widely used in a range of applications, from power supplies for laptops, lighting, motors, and more. As a type of bipolar junction transistor, IGBTs are capable of providing higher levels of performance than other bipolars, including low turn on voltage, low power consumption, and the fast switching speed.
FF650R17IE4VBOSA1 is essentially a power semiconductor module. It is composed of a chip and a pack, with the chip serving as the basic component with the physical electrical and thermal characteristics of the module. The pack, on the other hand, is responsible for the external protection and electrical conduction of the chip, providing additional features such as integrated support elements, precise power source, base plates, and additional protection features.
In terms of application field, FF650R17IE4VBOSA1 is widely used in a range of applications. It is suitable for inverters, converters, UPS systems, and solar PV systems, as well as for motor control, induction heating, battery bank, and general power supplies.
In terms of its working principle, FF650R17IE4VBOSA1 simply operates just like a standard transistor: when a current is applied to the base, it allows the flow of current from the collector to the emitter. The great advantage of using IGBTs is that they are able to withstand much higher levels of voltage and power than other types of transistors, meaning they can be used in a variety of applications that require higher levels of voltage or current.
The main benefits of using FF650R17IE4VBOSA1 include high switching frequency, low drive requirements, and high reliability. Thanks to these benefits, this type of module is able to reduce the power losses in the circuit and provide an overall improved system performance. Additionally, due to its low power consumption, this module is highly energy efficient, making it suitable for use in applications where low power consumption is desired.
In addition, FF650R17IE4VBOSA1 is known for its high thermal performance, meaning it is able to efficiently dissipate heat generated during its operation, thus preventing overheating and damage to the module. Furthermore, it is capable of operating with ambient temperatures of up to +85 degrees Celsius, making it suitable for use in extreme environments.
Overall, FF650r17IE4VBOSA1 is a type of IGBT module that is highly reliable and suitable for a wide range of applications. It is able to provide high levels of performance while consuming low levels of power, making it highly energy efficient. Additionally, this module is capable of operating with high levels of thermal performance, meaning it can be used in extreme conditions without suffering from damage or overheating.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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