FF650R17IE4DPB2BOSA1

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The FF650R17IE4DPB2BOSA1 is an IGBT module developed for a wide range of applications. It provides a high power density, low power loss and excellent gate drive capability.

The device is comprised of a full bridge IGBT module with two IGBTs in series. This module has reverse polarity capability and high commutation capability which makes it ideal for a range of applications such as uninterruptible power supplies, solar power inverters, and motor drives.

The topology of the module is designed to provide an integrated package with superior thermal performance. The IGBT chips are connected in series for a larger forward current capacity. The module also features a reverse polarity connection for better reverse current capacity.

The FF650R17IE4DPB2BOSA1 is designed with a large power edge-pool dielectric technology, which allows for higher current densities and higher switching speeds. This device is designed to handle high power applications requiring low losses and fast switching speeds. The module also features a Pb-free package construction and a halogen-free design.

The device operates at a wide range of temperature and is suitable for operation at temperatures ranging from -40° C to 150° C. The module features a wide operating frequency range and can support a variety of switching speeds. In addition, the module has a built-in over-temperature protection feature to ensure device safety at all times.

The FF650R17IE4DPB2BOSA1 features a highly integrated design and has a low gate drive current requirement of 8 mA. This module also features a fast switching speed of up to 1 micro second. The device also has a fast short circuit protection time, with a typical short circuit current of 5 times the rated current of the module.

Finally, the FF650R17IE4DPB2BOSA1 module is designed to provide superior gate drive performance in harsh environment applications. It is designed with a low driver switching loss to provide optimum gate driving capabilities. Additionally, the module is designed for low gate charge time, making it ideally suited for switching and commutation applications.

In summary, the FF650R17IE4DPB2BOSA1 is a high performance IGBT module designed for a wide range of applications. With its low power losses, excellent gate drive performance, high commutation capability and reverse polarity connection, this device is ideal for uninterruptible power supplies, solar power inverters and motor drives.

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