FF650R17IE4DB2BOSA1

Series:	--
Part Status:	Active
IGBT Type:	--
Configuration:	2 Independent
Voltage - Collector Emitter Breakdown (Max):	1700V
Power - Max:	4150W
Vce(on) (Max) @ Vge, Ic:	2.45V @ 15V, 650A
Current - Collector Cutoff (Max):	5mA
Input Capacitance (Cies) @ Vce:	54nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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FF650R17IE4DB2BOSA1 Application Field and Working Principle

Introduction

The FF650R17IE4DB2BOSA1 is an insulated gate bipolar transistor (IGBT) module with power switch characteristics. It is developed in high speed technology, guarantees fast switching operations and offers very fewer losses due to a reduced base current and a corresponding minimized power consumption. It is encapsulated in a plastic mould and equipped with mounting pads and a draining tab with a suitable thermal resistance.

Usage

The FF650R17IE4DB2BOSA1 IGBT module can be used for different applications like power conversion, motor controls, variable speed control and more. With a maximum junction temperature of 175°C, the IGBT module can handle 500A continuous collector current and up to 3300V collector-to-emitter breakdown voltage. Its high insulation voltage of 5800V C.C. between gate, collector and emitter makes it a reliable choice for all AC to DC, DC to DC and DC to AC power conversion systems.The IGBT module is also suitable for DC driven systems such as, solar specific applications such as Grid-tied PV Inverters, motor controllers and more.

Working Principle

The FF650R17IE4DB2BOSA1 IGBT module works on the principle of a transistor, where both electrons and holes are injected into the base layer. When a positive voltage is applied to the collector, an electric field is formed, which attracts and accelerates electrons towards the collector contact. Holes in the base layer are attracted to the emitter contact due to the electric field created. This results in current flow between two contacts. If the voltage is too high or exceeds the breakdown voltage, a short circuit current known as the collector emitter short circuit current (CESC) will flow in the circuit and the transistor will be destroyed.

Conclusion

The FF650R17IE4DB2BOSA1 IGBT module has wide application areas, offers high current and voltage capacities and is suitable for DC driven systems. It works on the principle of a transistor, where electric field is formed to accelerate electrons and holes and regulate the current flow. The module has been designed with an encapsulation material to reduce losses and a thermal resistance. Such features make it easier to achieve fast switching and improved system efficiency.

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