How to measure the MOS field effect transistor?

Last Update Time: 2018-12-21 14:50:02

When the MOS field effect transistor is Vcs = 0, Ip = 0, that is, the RDs after short circuit of G and S are infinite; when Vcs = 0, the Ip is a certain value, and after the short circuit of G and S, the RDs present a certain resistance. Accordingly, the conductivity type of the field effect transistor can be distinguished, and the corresponding D can be deduced according to the polarity of the stylus connected with the pin, channel Type of S Electrode.


( 1 ) Determination of 1G pole of MOS field effect transistor.

Using the multimeter RX1 ~ RX10kQ, the red and black stylus respectively measure the positive and anti-resistance of each pin, when the measured foot is not connected with the other two feet, this foot is the G pole, and the other two feet are D and S poles.


(2) Distinguish the drain D and the source S. After judging the G pole, the G is connected with the red pen by a wire, and the red and black markers are used to measure the positive and negative resistance of D and S respectively. If the first resistance is small, and the first resistance is infinite, it shows that the tube is an N-channel reinforced tube. If there is a small resistance, the first resistance is larger, indicating that the tube is an N-channel depletion type pipe, the above measurement, the first time is the standard resistance. The red stylus is connected to the source s, and the black stylus is the drain D, P channel enhancement and depletion type are opposite to the above ( application wire short G and black pen ).


If you want to know more, our website has product specifications for MOS field effect transistors, you can go to ALLICDATA ELECTRONICS LIMITED to get more information


MOSFETs: PD55003L-E

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