What is a Schottky diode and how to detect it?

Schottky diode is a low-power, high-current, ultra-high-speed semiconductor device.

Its reverse recovery time trr can be small to a few nanoseconds, the forward conduction voltage drop is only 0.1 ~ 0.5 V, and the rectification current can reach several thousand.

It takes the N-type semiconductor as the substrate, and forms the N-epitaxial layer with arsenic as the dopant. The anode ( barrier ) metal material is aluminum. Silicon dioxide ( SiO2 ) is used to eliminate the electric field in the edge area and improve the pressure value of the pipe. The doping concentration of N type substrate is 100 times higher than that of N, and has very small on-state resistance.

The N + cathode layer at the lower part of the substrate is used to reduce the contact resistance of the cathode. An appropriate Schottky barrier can be formed between the substrate and the anode metal by adjusting the structural parameters. The structure of the Schottky diode is the same as that of the half-bridge, so the measuring method is the same as the half-bridge component. When measured with a digital meter, the forward internal resistance voltage is less than 0.5 V, which is lower than that of an ordinary diode.

This article is from Allicdata Electronics Limited.