New LDMOS transistor pair

For RF power amplifiers for industrial applications and medical technology, Ampleon has developed a new LDMOS transistor pair. With it, you can achieve efficiencies as high as 72.5%.

Two power MOSFETs BLF0910H9LS750P Ampleon is designed for use with power amplifiers from 902 MHz to 928 MHz. The common source power MOSFET is rated for 50V and is suitable for industrial, scientific and medical systems as well as professional cookware.

With 915 MHz continuous operation (CW), two power MOSFETs can generate up to 750 W of output power in the AB stage. Then achieve 72.5% efficiency. When a wider frequency band is 902 MHz to 928 MHz, it is about 69% efficient. In pulse mode, the power MOSFET even produces 850 W of product type RF power with 70% efficiency.

Due to its robust construction, the BLF0910H9LS750P load side mismatch is a standing wave ratio (VSWR voltage standing wave ratio): corresponding to all stages. This simplifies the amplifier stage and uses less complex circuits. The circuit design can be further simplified by the pre-matched input of the MOSFET.

The MOSFET pair BLF0910H9LS750P is based on Ampleon's Gen9HV-50V process, ensuring a high level of product complexity for the manufacturing process.

This article is from Allicdata Electronics Limited.