1.5CE200A TR Allicdata Electronics
Allicdata Part #:

1.5CE200ATR-ND

Manufacturer Part#:

1.5CE200A TR

Price: $ 0.35
Product Category:

Circuit Protection

Manufacturer: Central Semiconductor Corp
Short Description: TVS DIODE 171V 274V DO201
More Detail: N/A
DataSheet: 1.5CE200A TR datasheet1.5CE200A TR Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1400 +: $ 0.31752
2800 +: $ 0.29635
7000 +: $ 0.28224
Stock 1000Can Ship Immediately
$ 0.35
Specifications
Voltage - Clamping (Max) @ Ipp: 274V
Supplier Device Package: DO-201
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 5.5A
Series: --
Voltage - Breakdown (Min): 190V
Voltage - Reverse Standoff (Typ): 171V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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1.5CE200A TR (also known as Transient Voltage Suppressor Diode) is an extremely efficient form of transient voltage suppression device commonly used in a broad range of applications. It has the ability to absorb an excess amount of energy in the case of a direct short, from power surges, over-voltage situations, electro-magnetic interference (EMI), and electro-static discharge (ESD). These devices can be thought of as “mini-fuse” components, where they are capable of suppressing voltages up to 200A, in particular for the 1.5CE200A TR.

1.5CE200A TR devices are often utilized in consumer electronic applications such as cell phones and satellites, computer networks, and automotive electronics where a high levels of reliable performance and stability are required. They are also optimized for general purpose applications, and are engineered for superior performance, durability, and lifespan.

The working principle of 1.5CE200A TR devices is based on the fact that a constant reverse voltage is applied to a p-n junction formed by two silicon bulk-doping processes, resulting in the formation of two depletion regions around the junction. When a transient event occurs, a large current flow is initiated and a large amount of charge accumulates in the junction. This charge causes the reverse voltage to decrease, consequently generating a low resistance in the case of a short-circuit event. The increased current flow causes an increase in the resistance of the diode, thereby reducing the short-circuit current.

The working of 1.5CE200A TR is to be able to absorb an excess amount of energy during a direct short-circuit, due to power surges, over-voltage events, or ESD and EMI. It is important for such devices to have a high energy capacity to safely absorb and dissipate these types of energy, while also maintaining stable performance over long periods of time. By utilizing advanced methods of circuit protection technology, 1.5CE200A TR devices are able to safely and effectively protect circuits from damage that is caused by power surges, over-voltage events, and EMI and ESD.

In conclusion, 1.5CE200A TR is an extremely efficient form of transient voltage suppression device commonly used in a broad range of applications. Its working principle is based on its ability to absorb an excess amount of energy in the case of a direct short, from power surges, over-voltage situations, electro-magnetic interference (EMI), and electro-static discharge (ESD). The device is optimized for general purpose applications, and is engineered for superior performance, durability, and lifespan.

The specific data is subject to PDF, and the above content is for reference

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