Allicdata Part #: | 1.5SMC39ATR13-TR-ND |
Manufacturer Part#: |
1.5SMC39A TR13 |
Price: | $ 0.29 |
Product Category: | Circuit Protection |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TVS DIODE 33.3V 53.9V SMC |
More Detail: | N/A |
DataSheet: | 1.5SMC39A TR13 Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.25931 |
6000 +: | $ 0.24696 |
Voltage - Clamping (Max) @ Ipp: | 53.9V |
Supplier Device Package: | SMC |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 28A |
Series: | -- |
Voltage - Breakdown (Min): | 37.1V |
Voltage - Reverse Standoff (Typ): | 33.3V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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Transient Voltage Suppressors (TVSs) are a form of diode technology designed to protect sensitive circuits from oversurge, electrostatic discharge (ESD) and overvoltage transients. The 1.5SMC39A TR13 is a popular example of a TVS diode. This article will discuss the application fields and working principle of the 1.5SMC39A TR13.
The 1.5SMC39A TR13 is a uni-directional diode capable of suppressing transients up to 13V. It is a leaded component in a DFN 1212- 8 package (SMD 1212) and can withstand peak standoff voltage of 45V and peak current ratings of 20A. It is a versatile surface mount device (SMD) and is often found in applications such as automotive, military and aerospace, consumer electronics, medical equipment, and power electronics.
The 1.5SMC39A TR13 is designed to protect against surges and other forms of overvoltage transients. It achieves this by clamping excess voltage which momentarily causes the voltage to be limited to a safe level. This limiting of the voltage is achieved by the diode structure. When operating under normal levels of voltage, the TVS diode remains in an open state, meaning there is no electrical conduction. However, when transients occur and the voltage exceeds the rated voltage of the diode, the diode structure changes and closes, allowing electrical conduction. This provides protection for the sensitive circuit by decreasing the increased voltage.
In order to understand how the diode structure changes, it is important to understand the principle of the PN junction which is used in all semiconductor devices. The PN junction is the physical interface between positive and negative materials, often in the form of P-type and N-type materials (such as silicon and germanium). This junction is normally biased, meaning it is connected to a power supply which maintains the junction in an open state (with no electrical conduction). When transients occur, the junction is a bit more complicated; it behaves similarly with a conventional diode, with the addition of a "clamping" voltage.
The clamping voltage is caused by the PN junction being reverse biased. While in reverse bias, the device begins to conduct when the voltage level reaches the "breakdown voltage". When the breakdown voltage is reached, a large current flows from the P side to the N side of the diode. This current is limited by the internal resistance of the device, thus providing protection for the sensitive circuit.
In summary, the 1.5SMC39A TR13 is a uni-directional diode designed to protect against transient overvoltage conditions. It is capable of suppressing transients up to 13V and is often used in applications such as automotive, military and aerospace, consumer electronics, medical equipment, and power electronics. It achieves this protection by functioning as a PN junction with a clamping voltage. The PN junction is reverse biased, allowing a large current to flow when the breakdown voltage is reached, thus limiting the potentially damaging voltage of the transient.
The specific data is subject to PDF, and the above content is for reference
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