11LC010-E/P

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	1Kb (128 x 8)
Clock Frequency:	100kHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	Single Wire
Voltage - Supply:	2.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 125°C (TA)
Mounting Type:	Through Hole
Package / Case:	8-DIP (0.300", 7.62mm)
Supplier Device Package:	8-PDIP
Base Part Number:	11LC010

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Introduction

The 11LC010-E/P is a type of memory that has a number of applications in the electronics industry. It is a type of non-volatile memory that is commonly used for storing data and code on embedded electronics devices. This type of memory is also referred to as EEPROM or Electrically Erasable Programmable Read-Only Memory.

Typical applications

The 11LC010-E/P has a number of applications, ranging from everyday consumer devices such as laptop computers, PDAs, digital cameras and gaming devices, to more specialized industrial applications such as RF transceivers, medical instrumentation and automotive electronics. The memory is commonly used to store critical data and code on these devices, as well as to provide additional storage for data.

Technical specifications

The 11LC010-E/P is a 1M bit memory device that operates in a variety of configurations and protocols. It is a byte-wide memory device with a 2.5V core voltage range, and can operate in both asynchronous and synchronous (NVM) modes. One of its main features is the ability to write and erase individual bytes or words, as well as control data retention times. The device also supports a wide range of programming protocols, such as Software SPI, I2C and 3-wire.

Working principle

The 11LC010-E/P works by either writing or erasing data from the memory array. This is done by applying external direct currents to the write or erase pins of the memory device, respectively. To write data, an appropriate combination of 0s and 1s is applied to the input lines of the device, and to erase data a short current pulse is applied to the appropriate erase pin.Once data is written to or erased from the memory array, it must be retained in order to ensure that it is not lost. This is accomplished through the use of N-Way cells, which are located at each cell of the memory array. The N-Way cells function by isolating the memory cells from outside influences and providing a constant source of retention current.

Conclusion

The 11LC010-E/P is a type of non-volatile memory device that is used in a variety of applications, ranging from consumer electronics to industrial applications. It is a byte-wide memory device with a 2.5V core voltage range, and can operate in both asynchronous and synchronous (NVM) modes. The 11LC010-E/P works by either writing or erasing data from the memory array, which is done by applying external direct currents to the write or erase pins of the memory device, respectively. Data is retained in the memory array by the use of N-Way cells, which are located at each cell of the memory array.

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