11LC010T-I/SN Allicdata Electronics
Allicdata Part #:

11LC010T-I/SN-ND

Manufacturer Part#:

11LC010T-I/SN

Price: $ 0.13
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 1K SINGLE WIRE 8SOIC
More Detail: EEPROM Memory IC 1Kb (128 x 8) Single Wire 100kHz ...
DataSheet: 11LC010T-I/SN datasheet11LC010T-I/SN Datasheet/PDF
Quantity: 1000
3300 +: $ 0.11680
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: 11LC010
Description

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Memory is a type of integrated circuit that allows digital devices to store and retrieve data quickly. The production of memory is one of the primary components of the modern electronics industry. One such type of memory is the 11LC010T-I/SN, a device that combines DRAM and flash memory in a single package. This type of device is useful in a variety of applications, and the following article will explain the 11LC010T-I/SN application field and working principle in detail.

The 11LC010T-I/SN is a type of dual in-line memory module that integrates DRAM and flash memory. It is typically used in mobile devices, such as laptops, tablets, and smartphones. The design of the 11LC010T-I/SN is such that both DRAM and flash memory can be used in one physical package, which helps to minimize the overall form factor. This makes the 11LC010T-I/SN ideally suited for use in mobile devices where space is a premium.

The 11LC010T-I/SN consists of two separate chips, one being the DRAM chip and the other being the flash memory chip. The DRAM portion is designed to provide quick, responsive access to data, while the flash memory portion is designed to store data more permanently. The 11LC010T-I/SN utilizes something called dynamic refresh, which helps keep data stored in the DRAM portion of the module from being lost due to power fluctuations or interrupts.

In terms of the 11LC010T-I/SN working principle, the device is designed using a technique known as “spiking.” This technique helps to increase the data access speed of the device by dynamically allocating resources to more frequently accessed areas of the memory. The 11LC010T-I/SN also utilizes a process called “garbage compaction” to maintain effective system performance. This process eliminates any unused data in the device, freeing up space for more frequently accessed data.

One of the primary benefits of the 11LC010T-I/SN is its high level of energy efficiency. The combination of DRAM and flash memory helps to reduce power consumption, as the device only consumes energy when actively accessing or writing to its memory. The device also offers a lower standby power consumption than non-dual in-line memory modules, making it an attractive choice for devices that require low power consumption.

The 11LC010T-I/SN is an ideal memory choice for a variety of applications that require quick and efficient access to data. It is ideal for mobile devices such as smartphones, tablets, and laptops, as it provides a high level of efficiency while allowing a small form factor. Its combination of DRAM and flash memory allows it to provide both permanent and temporary storage without sacrificing performance or energy consumption.

The specific data is subject to PDF, and the above content is for reference

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