150-201N09A-00 Allicdata Electronics
Allicdata Part #:

150-201N09A-00-ND

Manufacturer Part#:

150-201N09A-00

Price: $ 11.32
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS-RF
Short Description: RF MOSFET N-CHANNEL DE150
More Detail: RF Mosfet N-Channel 200W DE150
DataSheet: 150-201N09A-00 datasheet150-201N09A-00 Datasheet/PDF
Quantity: 231
1 +: $ 10.29420
10 +: $ 9.36054
100 +: $ 7.95648
Stock 231Can Ship Immediately
$ 11.32
Specifications
Series: DE
Packaging: Tube 
Part Status: Active
Transistor Type: N-Channel
Frequency: --
Gain: --
Current Rating: 9A
Noise Figure: --
Power - Output: 200W
Voltage - Rated: 200V
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: DE150
Description

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A 150-201N09A-00 is a field effect transistor (FET) that is used in radio-frequency (RF) applications. This type of transistor is able to handle high frequencies, making it ideal for use in cellular phones, television sets, and satellite communication equipment.

The main advantage of the 150-201N09A-00 FET is its ability to offer a high amount of gain across a wide bandwidth and at elevated frequencies. This makes it perfect for RF applications that require a wide range of high frequency signals. These include applications like wireless communication, video broadcasting, and other wireless data transmission.

The 150-201N09A-00 transistor has a simple construction, consisting of four terminals, two gates, and three electrodes. The two gates are used to control the amount of current that is allowed to flow through the device. The three electrodes are connected to the source, gate and drain, respectively. The source, gate and drain are all conductive, allowing for efficient and rapid switching of the current flow.

The working principle behind the 150-201N09A-00 transistor is relatively simple. When a voltage is applied to one of the gates, it attracts electrons to pass through the source and into the device. This creates a conductive path between the drain and source. The electric current then flows between these two terminals.

By adjusting the gate voltage, the device can be used to control the amount of current that flows in an RF circuit. This makes it an important component of RF designs where a high amount of gain is required to amplify a signal or control the signal’s gain level. It is also used in signal mixing, signal filtering, and signal modulation.

The 150-201N09A-00 is a gain device, meaning that it is able to increase the amplitude of a signal across a wide frequency range. This allows for improved signal-to-noise ratio, which is important for RF applications. The device also offers low noise levels and low distortion, making it an excellent FET for high-end radio designs.

The 150-201N09A-00 transistor is used in a variety of applications. It can be found in mobile phones, radios, television sets, and satellite communication systems. It is also used in RF transmitters and receivers, wireless data links, and fiber-optic systems. With its high performance and wide frequency range, it makes an ideal device for many types of RF circuits.

The specific data is subject to PDF, and the above content is for reference

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