MRF6S18060NR1 Discrete Semiconductor Products

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The MRF6S18060NR1 is a silicon, laterally diffused metal oxide semiconductor (LDMOS) transistor, designed for RF power amplifiers. It is a push-pull design type featuring a single gate, enabling the device to be used in linear and other applications. It is found in impedance-matched amplifiers for satellite and navigation receivers, microwave point-to-point transmitters, high power radio links, and radio base stations.

The MRF6S18060NR1 has a maximum drain efficiency of up to 50%, making it suitable for applications requiring high-power efficiency. It also offers a large output power capability, with a supply voltage range of 16V to 28V and an operating frequency of up to 1000MHz. Additionally, it offers excellent gain regulation with a fast quiescent current response, making it an ideal solution for linear, Class AB and Class B amplifiers. It also has temperature protection capability, ensuring that it meets thermal requirements and is extremely reliable.

The basic working principle of the MRF6S18060NR1 is to use a transistor to control the quantity of DC current that flows across it at specified Operating Volts. The N-channel MOSFET is operated as a constant current source using an external drain bias voltage. This voltage is applied to the gate terminal of the transistor so that the current passing through the transistor is a function of the voltage applied to the gate terminal. This transistor then acts as a current amplifier, controlling the flow of current from the source to the drain of the transistor. This current amplification function is used in RF amplifiers to boost the RF power level of the signal.

The MRF6S18060NR1 is widely used in RF amplifiers, antenna tracking systems, satellite transmitters and receivers, PCS equipment, and more. As it is a high-current, high-power MOSFET, it is capable of providing high efficiency and improved system performance, while consuming low power. In addition, due to its low distortion and high input impedance, the MRF6S18060NR1 is also suitable for Class AB and Class B direct drive applications. Furthermore, this device is also highly reliable in terms of temperature and can operate at temperatures of up to 175°C, making it an ideal component for demanding applications.

In conclusion, the MRF6S18060NR1 is a silicon, laterally diffused metal oxide semiconductor (LDMOS) transistor that is mainly used for RF power amplifiers. It offers a high maximum drain efficiency and a large output power capability. Additionally, it has excellent gain regulation and temperature protection capability. With its ability to operate at high temperatures, high power and low distortion, it is an ideal choice for RF and direct drive applications where maximum performance is required.

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