MRF6S21050LR3

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MRF6S21050LR3 is a 50V, 45W N–Channel Lateral Heterojunction MOSFET (LH). A MOSFET is a type of Field Effect Transistor (FET). It is used in radio frequency (RF) applications such as wireless telecommunications and mobile radio. It is designed for operation in the frequency range of 300MHz to 2GHz, and offers up to 34dB gain.

A MOSFET is a three-terminal solid-state device whose operation relies on the field effect principle. It consists of an intrinsic channel between the source and drain, over which carriers (electrons or holes) can move when a voltage of the desired polarity is applied. The amount of current that can be transported across the channel is modulated by controlling the gate to source voltage.

The MRF6S21050LR3 MOSFET is manufactured with a special process to optimize its RF performance. It is suitable for use in high power applications such as amplifiers, power amplifiers, oscillators, mixers, and switches. It is characterized with several important parameters, including total power gain, conversion gain, noise figure, return loss, and input return loss.

This MOSFET provides high power and low thermal resistance, and is suitable for high frequency applications up to 2GHz. Its power dissipation and power handling capabilities make it suitable for use in high-power amplifiers and mobile radio applications. This MOSFET is also suitable for use in voltage regulator and switching applications that require low on-state losses.

The MRF6S21050LR3 is designed to operate over a temperature range of -55°C to 175°C. It features high peak power capability and can handle input signal levels up to +25dBm (50mW). Its robust structure and construction process makes it suitable for a wide variety of applications.

In conclusion, the MRF6S21050LR3 is a 50V, 45W N–Channel Lateral Heterojunction MOSFET (LH) specifically designed for use in radio frequency (RF) applications such as wireless telecommunications and mobile radio. It is characterized by high power and low thermal resistance, making it suitable for high-power amplifiers and mobile radio applications. It also features high peak power capability and can handle input signal levels up to +25dBm (50mW).

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