MRF1550NT1 Discrete Semiconductor Products |
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Allicdata Part #: | MRF1550NT1TR-ND |
Manufacturer Part#: |
MRF1550NT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 40V 175MHZ TO272-6 WRAP |
More Detail: | RF Mosfet LDMOS 12.5V 500mA 175MHz 14.5dB 50W TO-2... |
DataSheet: | MRF1550NT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 175MHz |
Gain: | 14.5dB |
Voltage - Test: | 12.5V |
Current Rating: | 12A |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 50W |
Voltage - Rated: | 40V |
Package / Case: | TO-272AA |
Supplier Device Package: | TO-272-6 |
Base Part Number: | MRF1550 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), also referred to as an IGBT, is an insulated gate type of transistor used in power electronics applications. It works by controlling the electrical current between the drain and the source by varying the resistance between the gate and the source, which is referred to as channel mobility. The MRF1550NT1 is a high-power RF MOSFET transistor designed specifically for RF amplifier applications. It features a high-current, high-power N-channel power MOSFET, utilizing an oxide-isolated gate oxide for superior performance and linearity.
The MRF1550NT1 has an operating temperature range from -55°C to +125°C and it can be operated between 8 to 50 VDC. It is ideal for applications such as low-to-moderate power RF amplifiers, RF switches and RF signal upconverters/downconverters. The device also comes with a short-term output power rating of 15W/MHz and a maximum drain-source voltage of 50V. It is also designed to provide superior system performance and superior immunity to thermal runaway.
In terms of its application field and working principle, the MRF1550NT1 is used to amplify RF signals in audio frequency (AF) and radio frequency (RF) applications. The transistor operates by creating an electric field by applying voltage to its gate pin. This creates a P-channel between the drain and the source, allowing current to flow through the transistor. This allows for a current gain of up to 1000 times when operating at 30Vdc and 8MHz. The operating frequency of the MRF1550NT1 can range from 10 MHz up to 1 GHz.
The MRF1550NT1 features low threshold voltage, low gate charge and low RDS-on rating, allowing optimal current transfer and thermal performance. The device also showcases its excellent thermal properties, as it is designed to dissipate heat quickly. It is also designed with a very low noise figure and provides excellent harmonic rejection, allowing it to be employed in audio and RF amplifier applications.
The MRF1550NT1 is a great choice for amplifier applications due to its low noise figure, high current transfer and excellent thermal performance. Its low voltage and high current ratings make it suitable for applications in the automotive and industrial industries. Its high current capabilities also allow it to drive high power RF signals, making it an ideal choice for RF amplifier applications in cellular, Wi-Fi and other communication systems.
In conclusion, the MRF1550NT1 is an ideal choice for RF amplifier applications due to its high current transfer and excellent thermal performance. Its low voltage and high current ratings make it suitable for applications in the automotive and industrial industries. Its low-noise figure and high harmonic rejection also make it suitable for audio and RF amplifier applications, such as Wi-Fi and cellular systems.
The specific data is subject to PDF, and the above content is for reference
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