15C01M-TL-E Allicdata Electronics
Allicdata Part #:

15C01M-TL-EOSTR-ND

Manufacturer Part#:

15C01M-TL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 15V 0.7A MCP
More Detail: Bipolar (BJT) Transistor NPN 15V 700mA 330MHz 300m...
DataSheet: 15C01M-TL-E datasheet15C01M-TL-E Datasheet/PDF
Quantity: 9000
Stock 9000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Power - Max: 300mW
Frequency - Transition: 330MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-MCP
Description

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Bipolar junction transistors (BJT) are widely used for amplifying signals in many circuits but can also be used to switch heavy currents. The 15C01M-TL-E specifically is a Bipolar junction transistor from STMicroelectronics. This device classifies itself as a single transistor meaning it has three elements, Base (B), Collector (C), and Emitter (E). This transistor is a small signal NPN device capable of delivering high current at low voltage which makes it ideal for many applications.

The 15C01M-TL-E is suitable for use in small to medium power applications in industrial and commercial fields. This transistor can be used in many different circuits, including audio amplifiers, small inverters and power supplies, logic gates, or switching applications. It can be also used as an analog switch to control the speed of motors or drive any sort of digital logic.

The working principle of the 15C01M-TL-E is based on the active region of the transistor. When a small-signal voltage is applied to the base terminal of the transistor, a current is created at the emitter terminal of the transistor and this in turn lowers the resistance between the collector and the emitter terminals. This allows for a larger amount of current to flow through the transistor and this is how the 15C01M-TL-E amplifies signals.

In general, a BJT is an active device, meaning that an external power source is required for it to operate. The 15C01M-TL-E operates at a maximum collector and emitter voltage of 30 Volts and a maximum collector current of 200mA. The maximum ratings of the device are crucial to consider when using it in a circuit.

Additionally, the 15C01M-TL-E is designed with a very low power equivalent noise figure, this allows for it to have excellent operating characteristics and reliability. The 15C01M-TL-E has excellent stability and noise reduction characteristics, and phenomenal noise immunity which is critical to many applications in the industrial and commercial fields.

Overall the 15C01M-TL-E makes an excellent choice for any application that requires a high current capacity, excellent stability and noise reduction performance, and fast switching speed. With its high reliability and excellent operating characteristics, this makes it an ideal choice for any small to medium power circuit application.

The specific data is subject to PDF, and the above content is for reference

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