Allicdata Part #: | 19MT050XF-ND |
Manufacturer Part#: |
19MT050XF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | MOSFET 4N-CH 500V 31A MTP |
More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 500V 31A 1140W... |
DataSheet: | 19MT050XF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 31A |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: | 6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 7210pF @ 25V |
Power - Max: | 1140W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 16-MTP Module |
Supplier Device Package: | 16-MTP |
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19MT050XF is a transistor device capable of delivering high current at low voltage. It works by utilizing the properties of the field-effect transistor (FET) in order to switch voltage and current with high levels of efficiency. In this article, we explore the application field and working principle of the 19MT050XF.
Application Field of the 19MT050XF
The 19MT050XF is a high-amp, low-voltage device that is used in a variety of applications where high current needs to be switched with efficiency and cost-effectiveness. Some of these applications include household and industrial lighting, DC motors, alternative energy sources, and more. Additionally, 19MT050XF is capable of high-frequency switching, making it well-suited for use in a range of telecommunications, broadcasting, and other digital signal applications.
Working Principle of the 19MT050XF
The 19MT050XF is a FET-based device that works by allowing a source signal to be amplified or ‘switched’ without the need of mechanical contact. This is accomplished by utilizing the properties of the FET, particularly its source-drain characteristics. Through varying the voltage of the source signal, the device can be made to switch quickly. When a low voltage is applied to the source signal, it will cause the FET to conduct, allowing a high current to flow through the device. When the voltage is increased, the FET will stop conducting, and the current flow will be cut off.
The 19MT050XF is also equipped with an integrated level shifter. This level shifter helps to protect the device from damage due to voltage surges and resistive loads. This level shifter is used once the device is turned on, and helps to reduce the on-state resistance of the device. Additionally, this level shifter helps to improve the linearity of the device’s output, allowing it to switch consistently even when the input signal varies.
Conclusion
19MT050XF is a FET-based transistor device that is designed for use in a variety of applications where high current needs to be switched with efficiency and cost-effectiveness. The 19MT050XF utilizes the properties of the FET in order to switch voltage and current with high levels of efficiency. The device is also equipped with an integrated level shifter, which helps to protect the device from damage due to voltage surges and resistive loads. This level shifter also helps to improve the linearity of the device’s output. By utilizing the 19MT050XF, engineers can create efficient and cost-effective switching solutions for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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19MT050XF | Vishay Semic... | 0.0 $ | 1000 | MOSFET 4N-CH 500V 31A MTP... |
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