1EZ100D2E3/TR8 Allicdata Electronics
Allicdata Part #:

1EZ100D2E3/TR8-ND

Manufacturer Part#:

1EZ100D2E3/TR8

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 100V 1W DO204AL
More Detail: Zener Diode 100V 1W ±2% Through Hole DO-204AL (DO-...
DataSheet: 1EZ100D2E3/TR8 datasheet1EZ100D2E3/TR8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 100V
Tolerance: ±2%
Power - Max: 1W
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 1EZ100
Description

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The 1EZ100D2E3/TR8 is a zener diode, which is a type of semiconductor component with a unique structure and an array of useful applications. This particular component is made from silicon, and its structure consists of a single PN junction. The diode is designed to allow current to move in one direction only, and when reverse biased, the diode can operate as an electrostatic protection device. This is known as Zener break-down.

The 1EZ100D2E3/TR8 is designed to be used as a protection device in circuit designs. In such applications, it acts as a voltage stabilizer as it will allow current to pass only within a predetermined range. This can be used to protect sensitive components from overvoltage or to prevent a voltage source from overloading an electrical circuit. The 1EZ100D2E3/TR8 can also be used in reverse polarization to control the speed of a DC motor.

In addition to its use in protection applications, the 1EZ100D2E3/TR8 can also be used as a current regulator, with the ability to optimize the voltage level within an electrical circuit. It operates by preventing current from exceeding the specified threshold, no matter what the load or the source voltage. In this way, the 1EZ100D2E3/TR8 can be used to maintain power stability throughout an electrical system.

The working principle of the 1EZ100D2E3/TR8 is based on the Zener break-down effect. When the zener diode is reverse bias, the potential barrier at the PN junction is overpowered, resulting in a breakdown effect. This breakdown effect is characterized by a sudden reduction in the voltage drop across the diode. This prevents overvoltage and allows current to only pass in a predetermined range, thus optimizing the voltage level within an electrical circuit.

It is important to note that the working principle of the 1EZ100D2E3/TR8 is highly dependent on the environmental conditions. The temperature and humidity must be controlled to ensure that the device’s performance is optimal. The device is also vulnerable to electrostatic damage, so it should be handled with care.

In summary, the 1EZ100D2E3/TR8 is a single PN junction zener diode with a wide range of applications in electronic circuit protection and voltage stabilization. It is designed to operate by means of Zener break-down, allowing current to only pass within a predetermined range. The device performance is highly dependent on the environmental conditions and handling.

The specific data is subject to PDF, and the above content is for reference

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