1EZ160D/TR8

Zener diodes are special type of diodes that are designed with a specific purpose in mind. They are used to limit or control the voltage across a circuit in order to protect other circuit components. The 1EZ160D/TR8 Zener diode is a single package, low voltage Zener diode with a breakdown voltage of 6.8V and a power dissipation of 600 mW.

The main application field of the 1EZ160D/TR8 Zener diode is in protection circuits against transient overvoltage, for low voltage regulated supplies, for precision reference voltage sources, for temperature compensation circuits and for parametric amplifiers.

In a protection circuit against transient overvoltage, these diodes are used in order to protect other circuit components from overvoltage spikes. The Zener diode is wired in parallel to the circuit in order to shunt any excess voltage. Furthermore, low voltage regulated power supplies use Zener diodes in order to prevent the output voltage to exceed a certain limit. This provides additional protection to the other electronic components that are connected to the output of the power supply.

The 1EZ160D/TR8 Zener diode can also be used as precision reference voltage sources for applications such as amplifiers and other circuits. Additionally, temperature compensation circuits also use these diodes to compensate for the effects of temperature changes on voltage output from the circuit. Lastly, these diodes are widely used in parametric amplifiers for the protection of the external elements and circuitry.

The working principle of the 1EZ160D/TR8 Zener diode is based on the PN junction phenomenon. When forward biased, the diode behaves like a normal diode and when reverse biased, it breaks down at a given threshold voltage depending on the applied voltage. The breakdown voltage of the diode is determined by its temperature coefficient and is usually around 6 to 8 volts.

In summary, the 1EZ160D/TR8 Zener diode is a low voltage single package Zener diode with a breakdown voltage of 6.8V and a power dissipation of 600mW. Its main application fields include protection circuits, low voltage regulated supplies, precision reference voltage sources, temperature compensation circuits, and parametric amplifiers. Its working principle is based on the PN junction phenomenon, whereby the diode breaks down at a given threshold voltage when reverse biased, determined by its temperature coefficient.