1EZ190D10E3/TR8 Allicdata Electronics
Allicdata Part #:

1EZ190D10E3/TR8-ND

Manufacturer Part#:

1EZ190D10E3/TR8

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 190V 1W DO204AL
More Detail: Zener Diode 190V 1W ±10% Through Hole DO-204AL (DO...
DataSheet: 1EZ190D10E3/TR8 datasheet1EZ190D10E3/TR8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 190V
Tolerance: ±10%
Power - Max: 1W
Impedance (Max) (Zzt): 1700 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 144.8V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 1EZ190
Description

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The 1EZ190D10E3/TR8 is a single Zener diode that offers efficient and reliable performance in a variety of applications. It is a low voltage, high current device that can handle a range of input voltages and provides reliable power delivery in a power-restricted environment. The 1EZ190D10E3/TR8 is a standard-sized package, with a maximum power rating of 1.2A and a maximum reverse voltage rating of 10V.

The 1EZ190D10E3/TR8 can be used in a variety of applications, including voltage regulation, voltage spike protection, direct current switching, reading/writing optical and/or capacitive current sensors, switching of flyback and discontinuous conduction mode (DCM) power supplies, DC-DC converters, and buck/boost converters. The 1EZ190D10E3/TR8 can also be used for illumination applications such as LED or LCD screens, or backlighting.

The working principle of the 1EZ190D10E3/TR8 is fairly simple. The diode is constructed of a single semiconductor element, typically a P-type semiconductor, surrounded by an N-type semiconductor. The P-type material is more positive than the N-type material, creating an imbalance of positive and negative charges. This imbalance creates a diode junction, which can be forward biased, meaning current will flow in one direction, or reverse biased, meaning current will flow in the opposite direction. When the forward bias is applied, the P-type material becomes increasingly positive relative to the N-type material, creating a voltage drop across the diode junction known as a Zener breakdown.

When the reverse bias is applied, current will not flow regardless of the P-type and N-type materials. The current only flows when a Zener breakdown is triggered. It is important to keep the forward bias below the breakdown voltage so that the P-type material does not become significantly more positive than the N-type material. The breakdown voltage for the 1EZ190D10E3/TR8 is 10V.

The 1EZ190D10E3/TR8 is relatively easy to use. Its power dissipation and voltage regulation are particularly efficient which makes it suitable for applications where power is a primary concern. The low forward voltage drop and high reverse voltage rating make it a great choice for efficient power delivery and protection against voltage transients. Its standard-sized package makes it a versatile option for tight-space applications.

The specific data is subject to PDF, and the above content is for reference

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