1KSMB18A M4G Allicdata Electronics
Allicdata Part #:

1KSMB18AM4G-ND

Manufacturer Part#:

1KSMB18A M4G

Price: $ 0.08
Product Category:

Circuit Protection

Manufacturer: Taiwan Semiconductor Corporation
Short Description: TVS DIODE 15.3V 25.5V DO214AA
More Detail: N/A
DataSheet: 1KSMB18A M4G datasheet1KSMB18A M4G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
6000 +: $ 0.07178
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Voltage - Clamping (Max) @ Ipp: 25.5V
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Current - Peak Pulse (10/1000µs): 39.2A
Series: 1KSMB
Voltage - Breakdown (Min): 17.1V
Voltage - Reverse Standoff (Typ): 15.3V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes

The 1KSMB18A M4G is a unidirectional silicon transient voltage suppressor (TVS) diode designed for ESD, lightning, and other transients protection. Its low profile, high-speed response, and low capacitance make it an excellent choice for various ESD applications such as laptop computers, cellular phones, digital cameras, and other portable electronics. The device provides superior protection against high energy transients from lightning, discharge paths, and other conductive objects.

Application Field

The 1KSMB18A M4G is primarily used in high speed data line interface protection. It provides superior ESD protection for vulnerable exposed pad and I/Os of sensitive electronics equipment. It is also suitable for use in audio & video signal selectors, medical instruments, satellite antennas, and data conversion devices. The device can also be used to protect power supplies and telecom systems from ESD, EMC, and other transient surges.

Working Principle

The 1KSMB18A M4G is designed with an advanced fabrication process which reduces the on-state resistance and surge current energy to a minimum. The device provides an increased ESD protection level due to the high clamping voltage under transient conditions. It is also designed with a low capacitance which helps reduce EMI emission and improves signal integrity. In addition, it includes a wide dynamic range of peak power handling and low clamping voltage.

When a transient voltage is applied to the diode, the device conducts current up to a predetermined voltage, known as the breakdown voltage. At this point, the device goes into a type of diode conduction mode, referred to as avalanche conduction. The current conducted in this mode increases as the applied voltage increases. As the voltage level continues to climb, the current will eventually reach a level that causes the diode to break down, releasing the stored energy and clamping the voltage back to a safe level. The device then automatically returns to its non-conductive state and is ready for the next transient.

Conclusion

The 1KSMB18A M4G is an ideal choice for protecting sensitive electronic equipment from ESD, EMC, and other transients. Its low on-state resistance, high-speed response, and low capacitance make it an excellent choice for applications that require superior transient protection. In addition, its high power handling capability and low clamping voltage make it an ideal device for various EMI protection applications.

The specific data is subject to PDF, and the above content is for reference

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