1KSMB18A Circuit Protection

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1KSMB18A is a Transient Voltage Suppressor (TVS) diode, which falls within the broad category of circuit protection devices. It is designed to protect sensitive circuit components from the destructive forces of electrical transients. Also referred to as a clamping diode, it is designed to limit large, potentially damaging voltage spikes or surges by quickly conducting the surge current away from the protected circuit.

The purpose of 1KSMB18A TVS diode is to provide electrostatic discharge (ESD) protection. ESD is a form of electrical current that is caused by electrostatic discharge or “stray electricity”. It is typically caused when two objects with varying electrical charge are brought into contact with each other. 1KSMB18A is designed to absorb and dissipate electrical current before it can cause damage or corruption of sensitive, low voltage circuits.

1KSMB18A features a reverse breakdown voltage of 18V, maximum peak pulse power of 1500 watts, and a response time of less than one nanosecond. The device is fabricated using Silicon Avalanche Technology (SAT) which provides higher ESD protection while consuming minimal current.

The Working principle of 1KSMB18A is based on the semi-conductor junction between p-type and n-type silicon. When a transient voltage spike is detected by the diode, the voltage causes an n-p junction to turn off and allow the transient current to pass through it. Since the current is limited, the temporary pulse is quickly dissipated, protecting the protected components from damage or corruption.

1KSMB18A is suitable for a wide variety of applications such as the protection of bus lines within a variety of systems, as well as data line protection. This device is well suited for use in consumer electronics, telecommunications, computer memory, logic and instrumentation systems, as well as other types of sensitive electronic equipment.

In conclusion, 1KSMB18A is an effective TVS diode that provides superior protection in a variety of applications. It features a reverse breakdown voltage of 18V, maximum peak pulse power of 1500 watts, and a response time of less than one nanosecond. The device is fabricated using SAT technology, and is well suited for use in consumer electronics, telecommunications, computer memory, logic and instrumentation systems, as well as other types of sensitive electronic equipment.

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