1KSMB7.5A Allicdata Electronics

1KSMB7.5A Circuit Protection

Allicdata Part #:

1KSMB7.5A-ND

Manufacturer Part#:

1KSMB7.5A

Price: $ 0.18
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: TVS DIODE 6.4V 11.3V DO214AA
More Detail: N/A
DataSheet: 1KSMB7.5A datasheet1KSMB7.5A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.15953
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Voltage - Clamping (Max) @ Ipp: 11.3V
Supplier Device Package: DO-214AA (SMBJ)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Current - Peak Pulse (10/1000µs): 88.3A
Series: 1KSMB
Voltage - Breakdown (Min): 7.13V
Voltage - Reverse Standoff (Typ): 6.4V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (transient voltage suppressor) diodes are for power system surge or transients protection devices, and 1KSMB7.5A is one of their popular models.

1KSMB7.5A is a bilateral, low capacitance device that can be connected in parallel for shunt and series protective circuits. It is equipped with high-speed response, low clamping voltage, low leakage current, excellent power handling capability, excellent clamping circuit, and low reverse noise.

For its application fields, 1KSMB7.5A is ideal for use in electronic systems and products with extreme power surge, and operates in temperatures up to 175°C, making it perfect for use in temperature-sensitive environments. This TVS protection diode can be found in markets like automotive systems, industrial equipment, telecommunication systems, data storage systems and ports, communications equipment and outlets, and many more.

Regarding the operating principle of 1KSMB7.5A, it contains a depletion mode MOSFET (D-MOSFET) at its core. The structure of a D-MOSFET can be expressed as “n+ poly/oxide/p substrate”. It constitutes two key elements of the TVS diode: the chip core and the electrodes. The chip core is responsible for controlling the conduction and breaking the overcurrent, and the electrodes assist with triggering the chip core in order to turn off the conduction when the overcurrent occurs.

The working mechanism of 1KSMB7.5A starts as the voltage of the circuit rises abnormally. During normal conditions, the D-MOSFET holds an OFF state, while its gate electrode keeps a positive voltage when an abnormal high voltage occurs. This positive voltage then triggers the core element and causes it to turn ON, allowing the current to flow through the diode until the voltage reduces, after which the D-MOSFET will resume its OFF state and protective mechanism will have finished its job.

Once the surge passes, the 1KSMB7.5A will reset and its protection applies again when the next surge occurs. It is important to note that this feature is designed to protect devices from just a single surge of short duration. It also allows the device to reset as quickly as possible so that the next surge can be nipped in the bud.

In conclusion, 1KSMB7.5A is an advanced TVS diode that can protect electronic circuits and systems from power surge or transients. While it is not suitable for protection from multiple surges, it is still perfect for sensitive environments such as automotive systems, telecommunication systems, and other related applications. The working principle of 1KSMB7.5A is based on its chip core, electrodes, and depletion mode MOSFET structure, which work in harmony for comprehensive protection.

The specific data is subject to PDF, and the above content is for reference

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