1KSMBJ11A Allicdata Electronics
Allicdata Part #:

1KSMBJ11A-ND

Manufacturer Part#:

1KSMBJ11A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: TVS DIODE 9.4V 15.6V DO214AA
More Detail: N/A
DataSheet: 1KSMBJ11A datasheet1KSMBJ11A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 15.6V
Supplier Device Package: DO-214AA (SMBJ)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive, Telecom
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Current - Peak Pulse (10/1000µs): 63.3A
Series: 1KSMBJ
Voltage - Breakdown (Min): 10.5V
Voltage - Reverse Standoff (Typ): 9.4V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TVS - Diodes are one of the most versatile components when it comes to protection of electronic circuits. In this article, we will discuss the 1KSMBJ11A application field and its working principle.

Application Field of 1KSMBJ11A

The 1KSMBJ11A is an ultra-low capacitance, ultra-low leakage, unidirectional and bidirectional transient voltage suppression diodes. It is suitable for protection of I/O ports, data lines and other circuits against electrostatic discharge (ESD). It is also suitable for low power DC-DC converter applications such as UPS systems, fuel cells and power supplies. The 1KSMBJ11A series is able to provide an excellent ESD protection level of up to 25kV (IEC 61000-4-2 Level 4). It is also capable of withstanding high-peak pulse current up to 1A and is able to suppress fast transients caused by lightning strikes or inductive switching. The 1KSMBJ11A is widely used in automotive, industrial and consumer applications due to its small package, low leakage current, wide operating temperature and ESD protection capabilities.

Working Principle of 1KSMBJ11A

The 1KSMBJ11A adopts the Zener diode structure to achieve its transient voltage suppression capabilities. When there is a sudden increase in the voltage across its terminals, the diode starts to conduct. Its internal structure includes an avalanche P-N junction, made from either silicon or a combination of silicon and an alloying element. The properties of the P-N junction enable it to break down “avalanchely” when the voltage across the junction exceeds its breakdown voltage. This lowers the voltage flowing through the device and thus prevents it from damaging the equipment connected to it.

Furthermore, the 1KSMBJ11A has extremely high breakdown voltage specifications. It is able to handle relatively high voltages up to 400V and under fast transients up to 53A. The main advantages of the 1KSMBJ11A are its ultra-low capacitance and high clamping voltages, which makes it suitable for high-speed interface protection. Moreover, the 1KSMBJ11A also has a high surge tolerance capability, making it suitable for protection against lightning strikes.

In conclusion, the 1KSMBJ11A is a versatile and reliable transient voltage suppression diode. It comes with a wide operating temperature range and high ESD protection level, making it suitable for automotive, industrial and consumer applications. Moreover, the 1KSMBJ11A’s high surge tolerance and ultra-low capacitance make it suitable for protection against fast transients and high-speed interface protection.

The specific data is subject to PDF, and the above content is for reference

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