Allicdata Part #: | 1KSMBJ9.1A-ND |
Manufacturer Part#: |
1KSMBJ9.1A |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Littelfuse Inc. |
Short Description: | TVS DIODE 7.78V 13.4V DO214AA |
More Detail: | N/A |
DataSheet: | 1KSMBJ9.1A Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Specifications
Voltage - Clamping (Max) @ Ipp: | 13.4V |
Supplier Device Package: | DO-214AA (SMBJ) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Automotive, Telecom |
Power Line Protection: | No |
Power - Peak Pulse: | 1000W (1kW) |
Current - Peak Pulse (10/1000µs): | 75A |
Series: | 1KSMBJ |
Voltage - Breakdown (Min): | 8.65V |
Voltage - Reverse Standoff (Typ): | 7.78V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Description
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TVS - Diodes
TVS(Transient Voltage Suppression) diodes are wide-bandgap semiconductor devices designed to protect semiconductor circuits from electrostatic discharges and voltage transients, also called surges. They are part of the reliable surge protection within the device that can shield a device from high-voltage events. The 1KSMBJ9.1A is a miniaturized TVS - Diode structure.1KSMBJ9.1A Application Field
This kind of device works for a variety of applications and is designed to limit the rise time of an ESD pulse. This TVS diode series is specially adopted for SMT applications, and provides a cost-effective solution in the surface mounted device (SMD) ESD/EMI protection. A variety of electric supplies such as communication systems, consumer electronic products, and computer systems can benefit from this protection.1KSMBJ9.1A Working Principle
When there’s an ESD event, the threshold voltage of the device is activated and clamps the voltage levels. The leakage current of the device is low and usually does not affect the signal performance. It uses silicon junction technology and Schottky barrier technology to protect small devices from extremely low breakdown voltages. The device works by significantly limiting the voltage peak due to the inductance, EMI, and ESD while operating in the reverse-bias direction. In terms of electrostatic discharge protection, this TVS-Diode series provides excellent ESD protection with low clamping voltages and fast response time, making it an ideal choice for Printed Circuit Board (PCB) protection. For example, the 1KSMBJ9.1A TVS-Diode has a low standoff voltage of 9.0 volts and peak reverse clamping voltage of 19.2 volts, with a typical response time of less than 1 microsecond. This significantly improves the protection efficiency of the board, and helps to prevent signal degradation due to ESD events. The benefit of this device is that it is a compact and low-cost solution for ESD/EMI protection, making it ideal for applications with limited space and budget. Its low forward turn-on voltage and low leakage current allow it to remain operational without creating excessive heat or emitting radiation.The 1KSMBJ9.1A is a good choice for any application that requires superior ESD/EMI protection as well as a low turn-on voltage and low forward-conduction current. It is also a great protection device for high-current circuits and is designed to provide unsurpassed protection to sensitive semiconductor components.
TVS(Transient Voltage Suppression) diodes are wide-bandgap semiconductor devices designed to protect semiconductor circuits from electrostatic discharges and voltage transients, also called surges. They are part of the reliable surge protection within the device that can shield a device from high-voltage events. The 1KSMBJ9.1A is a miniaturized TVS - Diode structure.1KSMBJ9.1A Application Field
This kind of device works for a variety of applications and is designed to limit the rise time of an ESD pulse. This TVS diode series is specially adopted for SMT applications, and provides a cost-effective solution in the surface mounted device (SMD) ESD/EMI protection. A variety of electric supplies such as communication systems, consumer electronic products, and computer systems can benefit from this protection.1KSMBJ9.1A Working Principle
When there’s an ESD event, the threshold voltage of the device is activated and clamps the voltage levels. The leakage current of the device is low and usually does not affect the signal performance. It uses silicon junction technology and Schottky barrier technology to protect small devices from extremely low breakdown voltages. The device works by significantly limiting the voltage peak due to the inductance, EMI, and ESD while operating in the reverse-bias direction. In terms of electrostatic discharge protection, this TVS-Diode series provides excellent ESD protection with low clamping voltages and fast response time, making it an ideal choice for Printed Circuit Board (PCB) protection. For example, the 1KSMBJ9.1A TVS-Diode has a low standoff voltage of 9.0 volts and peak reverse clamping voltage of 19.2 volts, with a typical response time of less than 1 microsecond. This significantly improves the protection efficiency of the board, and helps to prevent signal degradation due to ESD events. The benefit of this device is that it is a compact and low-cost solution for ESD/EMI protection, making it ideal for applications with limited space and budget. Its low forward turn-on voltage and low leakage current allow it to remain operational without creating excessive heat or emitting radiation.The 1KSMBJ9.1A is a good choice for any application that requires superior ESD/EMI protection as well as a low turn-on voltage and low forward-conduction current. It is also a great protection device for high-current circuits and is designed to provide unsurpassed protection to sensitive semiconductor components.
The specific data is subject to PDF, and the above content is for reference
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