Allicdata Part #: | 1M110ZR1G-ND |
Manufacturer Part#: |
1M110Z R1G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 110V 1W DO204AL |
More Detail: | Zener Diode 110V 1W ±5% Through Hole DO-204AL (DO-... |
DataSheet: | 1M110Z R1G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05758 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 110V |
Tolerance: | ±5% |
Power - Max: | 1W |
Impedance (Max) (Zzt): | 450 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 83.6V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Description
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:Diodes - Zener - Single - 1M110Z R1G Application Field and Working Principle
The 1M110Z R1G Zener diode is a semiconductor device designed for use in electronic systems. It consists of a single layer of N-type silicon material doped with a high concentration of dopants, such as P or B, to provide a large active area for conduction. It is a popular choice for power supply design due to its unique characteristics that make it ideal for varying voltage requirements.Zeners are typically used in power supplies to provide regulated output in a wide range of applications. They provide a stable voltage output that is independent of the input, which allows them to eliminate noise from power lines and ensure the correct amount of power is supplied. The 1M110Z R1G is particularly well suited for low current applications such as automotive, telecommunications, and medical electronics.The 1M110Z R1G working principle is based on the fact that a reverse-biased diode will exhibit a voltage-dependent current as its resistance decreases. This effect is known as the "Zener effect" and is used in the R1G to provide a switching action when the device is connected to a current-controlled circuit. The R1G has a breakdown voltage of 1.1V and can be operated in the range of 0.2A to 1mA, making it ideal for use in applications requiring high precision regulation.The R1G consists of an N-type silicon wafer etched with a narrow strip on one side, known as the PN junction. When a positive voltage is applied to the junction, a current begins to flow, which gradually increases until the breakdown voltage is reached. At this point, the diode\'s resistance drops drastically, causing the voltage across the junction to drop to the Zener voltage. This creates a steady and stable output voltage, independent of the input.The 1M110Z R1G is a versatile component that has a variety of applications. It can be used as a voltage regulator, a current limiter, and a voltage divider. It can also be used to provide protection from excessive current or voltage, voltage fluctuations, and excessive heating. Additionally, it can be used to replace traditional resistors in some cases, allowing circuit designers to save space and reduce component counts.The 1M110Z R1G is a reliable and high-performance component that is widely used in power supply design. It is particularly useful in low-current applications due to its high precision, low power consumption, and high switching speed. In addition, its small size and low cost make it ideal for a wide range of applications.The specific data is subject to PDF, and the above content is for reference
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