1M110ZHR0G

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	110V
Tolerance:	±5%
Power - Max:	1W
Impedance (Max) (Zzt):	450 Ohms
Current - Reverse Leakage @ Vr:	5µA @ 83.6V
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)

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Introduction to 1M110ZHR0G

The 1M110ZHR0G is an ultra-fast zener diode with low leakage current, low capacitance, and high density packages. It is ideal for power and design applications. Its high speed, low capacitance response, and high frequency operation make it the perfect choice for applications where speed, efficiency, and reliability are required. It is designed to operate from nanoseconds to millimicroseconds.

Application Field of 1M110ZHR0G

The 1M110ZHR0G is an ideal solution for high speed switching applications, power supply design and power management, overvoltage protection of circuits, and communication system. Its low on-resistance and high speed make it good for applications that require greater current flow and faster response time. It is also great to use in radio frequency applications since it offers excellent shielding for electromagnetic interference. In addition, it has been used in consumer electronics for automotive, industrial, and military applications as well as consumer audio and video products.

Working Principle of 1M110ZHR0G

The 1M110ZHR0G works on a principle known as reversed-biased breakdown. It is essentially a junction formed between two diodes. One diode is forward biased and the other is reverse biased. When a voltage above a specified threshold is applied, current will flow in one direction and then, when the voltage is decreased, current will flow in the opposite direction. The reversed-biased breakdown occurs when the breakdown voltage of the diode is reached, and the resulting reverse current flow prevents increased conduction in the direction of the voltage.

Advantages of 1M110ZHR0G

The 1M110ZHR0G benefits from many advantages over other zener diodes. These include low leakage current, low capacitance, and high density packaging. It also offers superior noise immunity, superior thermal stability over temperature range, and excellent power handling capability. It also boasts an exceptionally low on-resistance, making it an excellent choice for applications that require speed, as well as power. The low capacitance and low switching times mean that the diode can handle high speed switching applications with little to no power consumption.

Limitations of 1M110ZHR0G

Despite its many advantages, the 1M110ZHR0G does have its limitations. Its main limitation is its relatively low breakdown voltage. This can cause the diode to become unreliable when used at higher voltages, as the power dissipation will be too high. In addition, it has a lower temperature range than other zener diodes, making it unsuitable for applications that need a wide operating temperature range. Last, but not least, it is limited in its power handling capability. Low capacitance and low switching times can cause the diode to fail if the power flow is too high.

Conclusion

The 1M110ZHR0G is an ultra-fast zener diode with low leakage current, low capacitance, and high density packages that is suitable for a wide range of applications. Its low on-resistance and high speed make it perfect for high speed switching applications, power supply design and power management, overvoltage protection, and radio frequency applications. It has a relatively low breakdown voltage, a lower temperature range than other zener diodes, and is limited in its power handling capabilities due to its low capacitance. Despite this, it is still a great choice for those who need speed, efficiency, and reliability.

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