1N2810B

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The 1N2810B is an axial single Zener diode/thyristor device specifically designed for reversed biased circuit protection applications. It is composed of an epitaxial layer of semiconductor material, typically Silicon or Germanium, placing a P+ or N+ diffusion region in an N or P-substrate, surrounded by an arsenic doped gate ring. This gate ring provides a junction between the diode and thyristor components, effectively allowing them to function independently.

The 1N2810B provides a controlled, high-power current limiting capability, making it highly suited to reverse-biased circuit protection. This feature enables the device to prevent high current surges in the event of a failure, such as those associated with shorts. Furthermore, due to the voltage limitation provided by the Zener diode section, the device is also effective in limiting the voltage levels applied to the circuitry.

The 1N2810B can be used in a variety of applications, including over-voltage protection for printed circuit boards, electronic control systems, and motor control circuits. Additionally, it can also be used for power supply failure protection, EMI suppression, and circuit protection from reverse-biased events.

The working principle of the 1N2810B is based on its dual-function construction, where the thyristor component can detect and handle current overloads, and the Zener diode component limits the voltage. The junction between the two components is sensitive to overcurrent, and when the current exceeds a certain threshold, the Zener section will reduce the voltage across the junction and hence limit the current.

When a reverse-biased event occurs, the thyristor section will detect the overload and shunt the current away from the load. This shunting of the current prevents the buildup of a damaging voltage across the junction and saves the protected circuit from destruction. Furthermore, by limiting the current flow through the circuit, the 1N2810B also helps to improve system reliability.

Overall, the 1N2810B is an ideal device for applications that require reverse-biased circuit protection or over-voltage and current limiting. Its robust construction and controlled high-power current limiting capability make it perfectly suited to these types of applications, and it is designed to provide reliable protection and increased system stability.

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