1N2827A

Series:	--
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	43V
Tolerance:	±10%
Power - Max:	50W
Impedance (Max) (Zzt):	4.5 Ohms
Current - Reverse Leakage @ Vr:	10µA @ 32.7V
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 10A
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Through Hole
Package / Case:	TO-204AD
Supplier Device Package:	TO-204AD (TO-3)
Base Part Number:	1N2827

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Introduction to 1N2827A

The 1N2827A is a high-performance Zener diode with a rated power dissipation of 500 mW and a reverse-breakdown voltage range of -4.7 V to -88 V. It is a 5 Watt single Zener diode, individually screened and tested for quality assurance, and is guaranteed to meet stringent specifications. It is manufactured from high-grade silicon and has an extended temperature range. It is designed to provide reliable service in a wide variety of applications.

Application of 1N2827A Zener Diode

The 1N2827A Zener diode is used in a wide range of applications, including voltage regulation, circuit protection, and stabilization. In voltage regulation, the diode is used to provide a reference voltage when a higher voltage is applied, allowing more precise control of voltages. In circuit protection, the diode is used to limit the maximum voltage that can be applied to a device, protecting the device from electrical damage. Finally, it can be used to stabilize a voltage which is subject to fluctuations, ensuring a constant output.

Working Principle of 1N2827A

The 1N2827A Zener diode works by passing current through a p-n junction in reverse bias. This causes a depletion region to be formed between the two components of the diode, allowing current to flow in only one direction. When the reverse voltage applied to the diode exceeds the breakdown voltage, a powerful current surge is produced due to the avalanche effect. This surge is controlled by the reverse bias voltage and the reverse current is limited to a safe and controlled level.The rate at which the avalanche effect takes place is determined by the quality and density of the semiconductor material used to make the diode. =A high-quality material leads to a higher breakdown voltage, while a lower-quality material has a lower breakdown voltage.

Conclusion

The 1N2827A Zener diode is a high-performance device designed to handle a wide range of power and voltage requirements. It is used in voltage regulation, circuit protection, and stabilization applications and works by passing current through a p-n junction in reverse bias. The breakdown voltage is determined by the quality of the semiconductor material used and is controlled by the reverse bias voltage applied to the diode.

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