1N2814RB

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes are among the most fundamental and versatile components used in electronic devices. Zener diode, as one of the several types of diode, is used as technique to control voltage in devices. Among the products of this category is the N2814RB, a single Zener diode, whose application field and working principle will be presented here.

The N2814RB is a DO-35 (sometimes referred to as a glass axial-leaded package) based silicon-based Zener diode. It is produced in the following variants: 3.3V, 5.1V, 6.2V and 8.2V. It has a maximum power dissipation of 500mW, a maximum reverse leakage current of 100nA and a maximum Zener impedance at its maximum rated Zener voltage of 5.1Ω. It can tolerate 8W of power for less than 10 seconds.

The N2814RB is mainly used to provide a stable voltage reference for small-signal circuits such as op amps, timers and other equivalents. More generally, the N2814RB can be employed to provide precision voltage level regulation for low current applications, for example for driving optical diodes. Additionally, it can be utilized to prevent voltage fluctuations when long wires are involved or as a clamping element when fast transient spikes occur.

N2814RB is based on the Zener diode principle. It is a special type of diode that operates in reverse bias, meaning that the voltage applied across its anode and cathode is in the opposite direction in respect to the standard diode operating mode. When an overloaded reverse voltage is applied, it starts to operate in the avalanche breakdown mode, which is the so called ‘Zener effect’, in a way that the voltage remains nearly constant across the diode, regardless of changes on the load and current.

Overall, the N2814RB provides a useful range of voltage references for small-signal analog and digital systems. Thanks to its small size and low power consumption, it is largely employed in low current applications. Beside from the many variants available 4 different breakdown voltages are available for selection, allowing for more specific use cases. Its silicon-based construction provides advantage in terms of cost and low barriers for production, easily making it a great choice for many usage scenarios.

The specific data is subject to PDF, and the above content is for reference