Allicdata Part #: | 1N2970A-ND |
Manufacturer Part#: |
1N2970A |
Price: | $ 17.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 6.8V 10W DO213AA |
More Detail: | Zener Diode 6.8V 10W ±5% Chassis, Stud Mount DO-21... |
DataSheet: | 1N2970A Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 15.33260 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 6.8V |
Tolerance: | ±5% |
Power - Max: | 10W |
Impedance (Max) (Zzt): | 1.2 Ohms |
Current - Reverse Leakage @ Vr: | 150µA @ 5.2V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 2A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-213AA |
Base Part Number: | 1N2970 |
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1N2970A application field and working principle
Classified into the category of Diodes - Zener - Single, 1N2970A is a silicon zener diode which is designed for use in special applications in voltage regulation where space restricts component size.
The 1N2970A has a relatively high output current capability due to its high power dissipation capability, low forward voltage drop and high breakdown voltage of 6.4V. With its large area contact, it has excellent thermal stability and maximum power dissipation capability at a much higher current than its predecessors. Additionally, its minimum operational voltage of 4V and minimum peak reverse voltage of 6.4V are lower than most typical preceding devices. With these features, it makes it a much more ideal option for high power applications where precisely regulated voltage is of prime importance.
The working principle of the 1N2970A is based on a higher junction breakdown voltage. When a bias current is applied, the high cross-over voltage across the junction is increased and thereby causing breakdown of the junction, thereby causing current to flow in a high conduction state. When the current across the junction reaches a certain value, the high voltage junction breakdown occurs which leads to the high power dissipation and the current carrying capacity to increase exponentially. As the current exceeds the peak level, the voltage across the junction decreases and the heat dissipated by the diode is maximized.
The 1N2970A is suitable for use as a high power zener diode in a variety of demanding applications including voltage regulation in high-voltage circuits, voltage actuated sensing and switchover circuits. Moreover, its range of operational voltages and wide input voltage ranges make it the ideal option for a variety of different power circuitry applications. Other uses of the 1N2970A include voltage regulation for high performance LEDs, degauss circuits for CRT monitors, as well as protective devices in high current applications, such as automotive charging and lighting circuits.
The 1N2970A is a versatile solution and is an excellent option for customers seeking an efficient, cost-effective solution for a range of demanding applications.
The specific data is subject to PDF, and the above content is for reference
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