Allicdata Part #: | 1N3212GN-ND |
Manufacturer Part#: |
1N3212 |
Price: | $ 3.47 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP 400V 15A DO5 |
More Detail: | Diode Standard 400V 15A Chassis, Stud Mount DO-5 |
DataSheet: | 1N3212 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 3.12600 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 15A |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 15A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N3212 |
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1N3212 is a type of diode that can be used in rectifying, as well as other diodes applications. The 1N3212 is a PN junction diode with a low forward voltage drop, making it a popular choice for use in rectification. The 1N3212 diode is a general-purpose diode, and can be used for many applications.
Applications of 1N3212
The 1N3212 diode can be used for a variety of applications, including rectification, switching, voltage-level shifting, and current regulation. It is commonly used in circuits to convert alternating current (AC) to direct current (DC). The low forward voltage drop of the 1N3212 makes it a good choice for applications where rectification needs to be performed with minimum power losses. The diode also has relatively low capacitance, making it well suited for high-frequency applications, such as oscillators.
The 1N3212 can also be used in many other applications, such as voltage-level shifting, where it can be used to reduce a voltage level without the need for an external regulator. It can also be used as a clamping diode, where it is used to limit the voltage spike in a circuit. The diode can also be used as a temperature sensing device, where it can detect the temperature of a given environment.
Working Principle of 1N3212
The 1N3212 diode is a PN junction diode, meaning that it is made up of two semiconductor materials - p-type and n-type. The p-type material is composed of positive charge carriers, and the n-type material is composed of negative charge carriers. The junction between the two materials is known as the depletion zone.
When the diode is forward biased (connecting the anode to a higher voltage than the cathode), electrons are pulled from the n-type material to the p-type material, leaving a net positive charge on the anode side and a net negative charge on the cathode side. This in turn creates a potential difference across the diode, allowing current to flow through the diode in the forward direction. The 1N3212 diode has a low forward voltage drop, which makes it a good choice for applications where rectification needs to be performed with minimum power losses.
When the diode is reverse biased (connecting the anode to a lower voltage than the cathode), the electrons in the depletion zone reduce the current that can flow through the diode. This makes the diode an effective barrier, preventing current from flowing across the junction in the reverse direction.
Conclusion
The 1N3212 diode is a popular choice for use in rectification and other applications due to its low forward voltage drop and wide range of applications. It is a PN junction diode that can be used for rectification, voltage-level shifting, current regulation, and more. Its working principle involves the creation of a potential difference across the diode when it is forward biased, which allows current to flow in the forward direction. When the diode is reverse biased, the depletion zone reduces the current that can be flow across the diode, creating an effective barrier.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N3214 | GeneSiC Semi... | 4.03 $ | 75 | DIODE GEN PURP 600V 15A D... |
VS-1N3208 | Vishay Semic... | 4.77 $ | 99 | DIODE GEN PURP 50V 15A DO... |
VS-1N3210 | Vishay Semic... | 4.77 $ | 155 | DIODE GEN PURP 200V 15A D... |
1N3210 | GeneSiC Semi... | 4.7 $ | 63 | DIODE GEN PURP 200V 15A D... |
VS-1N3212 | Vishay Semic... | 3.93 $ | 12 | DIODE GEN PURP 400V 15A D... |
VS-1N3209 | Vishay Semic... | 4.82 $ | 12 | DIODE GEN PURP 100V 15A D... |
VS-1N3214 | Vishay Semic... | 3.39 $ | 1000 | DIODE GEN PURP 600V 15A D... |
1N3208R | GeneSiC Semi... | 3.41 $ | 1000 | DIODE GEN PURP REV 50V 15... |
1N3210R | GeneSiC Semi... | 3.47 $ | 1000 | DIODE GEN PURP REV 200V 1... |
1N3212 | GeneSiC Semi... | 3.47 $ | 1000 | DIODE GEN PURP 400V 15A D... |
VS-1N3211 | Vishay Semic... | 3.61 $ | 1000 | DIODE GEN PURP 300V 15A D... |
VS-1N3208R | Vishay Semic... | 3.61 $ | 1000 | DIODE GEN PURP 50V 15A DO... |
VS-1N3209R | Vishay Semic... | 3.61 $ | 1000 | DIODE GEN PURP 100V 15A D... |
VS-1N3210R | Vishay Semic... | 3.61 $ | 1000 | DIODE GEN PURP 200V 15A D... |
VS-1N3211R | Vishay Semic... | 3.61 $ | 1000 | DIODE GEN PURP 300V 15A D... |
VS-1N3212R | Vishay Semic... | 3.61 $ | 1000 | DIODE GEN PURP 400V 15A D... |
1N3214R | GeneSiC Semi... | 3.75 $ | 1000 | DIODE GEN PURP REV 600V 1... |
1N3209R | GeneSiC Semi... | 3.82 $ | 1000 | DIODE GEN PURP REV 100V 1... |
1N3209 | GeneSiC Semi... | 3.83 $ | 1000 | DIODE GEN PURP 100V 15A D... |
1N3211 | GeneSiC Semi... | 3.83 $ | 1000 | DIODE GEN PURP 300V 15A D... |
1N3211R | GeneSiC Semi... | 3.83 $ | 1000 | DIODE GEN PURP REV 300V 1... |
1N3212R | GeneSiC Semi... | 3.83 $ | 1000 | DIODE GEN PURP REV 400V 1... |
VS-1N3214R | Vishay Semic... | 3.93 $ | 1000 | DIODE GEN PURP 600V 15A D... |
VS-1N3213 | Vishay Semic... | 4.43 $ | 1000 | DIODE GEN PURP 500V 15A D... |
1N3213 | GeneSiC Semi... | 4.7 $ | 1000 | DIODE GEN PURP 500V 15A D... |
1N3208 | GeneSiC Semi... | 5.16 $ | 1000 | DIODE GEN PURP 50V 15A DO... |
1N3213R | GeneSiC Semi... | 5.41 $ | 1000 | DIODE GEN PURP REV 500V 1... |
1N3290 | Vishay Semic... | 11.21 $ | 1000 | DIODE GEN PURP 300V 100A ... |
1N3263 | Powerex Inc. | 33.87 $ | 1000 | DIODE GEN PURP 200V 160A ... |
1N3263R | Powerex Inc. | 33.87 $ | 1000 | DIODE GEN PURP 200V 160A ... |
1N3264 | Powerex Inc. | 34.57 $ | 1000 | DIODE GEN PURP 250V 160A ... |
1N3264R | Powerex Inc. | 34.57 $ | 1000 | DIODE GEN PURP 250V 160A ... |
1N3265 | Powerex Inc. | 35.25 $ | 1000 | DIODE GEN PURP 300V 160A ... |
1N3265R | Powerex Inc. | 35.25 $ | 1000 | DIODE GEN PURP 300V 160A ... |
1N3260 | Powerex Inc. | 33.17 $ | 1000 | DIODE GEN PURP 50V 160A D... |
1N3260R | Powerex Inc. | 33.17 $ | 1000 | DIODE GEN PURP 50V 160A D... |
1N3261 | Powerex Inc. | 33.17 $ | 1000 | DIODE GEN PURP 100V 160A ... |
1N3261R | Powerex Inc. | 33.17 $ | 1000 | DIODE GEN PURP 100V 160A ... |
1N3262 | Powerex Inc. | 33.17 $ | 1000 | DIODE GEN PURP 150V 160A ... |
1N3262R | Powerex Inc. | 33.17 $ | 1000 | DIODE GEN PURP 150V 160A ... |
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