Allicdata Part #: | 1242-1003-ND |
Manufacturer Part#: |
1N3214R |
Price: | $ 3.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP REV 600V 15A DO5 |
More Detail: | Diode Standard, Reverse Polarity 600V 15A Chassis,... |
DataSheet: | 1N3214R Datasheet/PDF |
Quantity: | 1000 |
95 +: | $ 3.37030 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 15A |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 15A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N3214R |
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The 1N3214R is a single rectifier diode. It has a fast-forward recovery time and low voltage drop, making it ideal for reverse-biasing applications in low-frequency power supplies. It is also used for small-signal switching applications, particularly where high speed or short periods of time are desirable. Because of its low voltage drop, it is also used for applications where space-saving is important, such as automotive and electronic nav systems.The 1N3214R is a one-way diode, meaning that it allows current to flow in one direction only. It has a forward voltage rating of 200V and a maximum repetitive forward current rating of 0.5A. Its forward voltage drop is typically around 0.34V. Its reverse breakdown voltage is typically around 60V.The 1N3214R is typically used in rectifier circuits, where it is placed in series with a load, such as a motor, solenoid, or lighting element. It rectifies AC to DC, allowing the load to be operated off of DC power. It is also used in switching applications, where it is used to turn loads on or off rapidly.The working principle of the 1N3214R is based on the PN-junction. The PN-junction is a semiconductor device formed when two different regions of doped silicon (positive and negative) are joined together. At the junction, electrons from the negative region and holes from the positive region combine, resulting in a depletion region. When the 1N3214R is forward-biased, the depletion region disappears and current starts to flow. When the diode is reverse-biased, the depletion region increases, preventing current flow.The 1N3214R is a useful device for reverse-biasing and small-signal switching applications. Its low voltage drop, fast recovery time, and low reverse voltage make it especially suitable for these applications. It is available in a variety of package types and can be used in a wide range of electronic applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N3214 | GeneSiC Semi... | 4.03 $ | 75 | DIODE GEN PURP 600V 15A D... |
VS-1N3208 | Vishay Semic... | 4.77 $ | 99 | DIODE GEN PURP 50V 15A DO... |
VS-1N3210 | Vishay Semic... | 4.77 $ | 155 | DIODE GEN PURP 200V 15A D... |
1N3210 | GeneSiC Semi... | 4.7 $ | 63 | DIODE GEN PURP 200V 15A D... |
VS-1N3212 | Vishay Semic... | 3.93 $ | 12 | DIODE GEN PURP 400V 15A D... |
VS-1N3209 | Vishay Semic... | 4.82 $ | 12 | DIODE GEN PURP 100V 15A D... |
VS-1N3214 | Vishay Semic... | 3.39 $ | 1000 | DIODE GEN PURP 600V 15A D... |
1N3208R | GeneSiC Semi... | 3.41 $ | 1000 | DIODE GEN PURP REV 50V 15... |
1N3210R | GeneSiC Semi... | 3.47 $ | 1000 | DIODE GEN PURP REV 200V 1... |
1N3212 | GeneSiC Semi... | 3.47 $ | 1000 | DIODE GEN PURP 400V 15A D... |
VS-1N3211 | Vishay Semic... | 3.61 $ | 1000 | DIODE GEN PURP 300V 15A D... |
VS-1N3208R | Vishay Semic... | 3.61 $ | 1000 | DIODE GEN PURP 50V 15A DO... |
VS-1N3209R | Vishay Semic... | 3.61 $ | 1000 | DIODE GEN PURP 100V 15A D... |
VS-1N3210R | Vishay Semic... | 3.61 $ | 1000 | DIODE GEN PURP 200V 15A D... |
VS-1N3211R | Vishay Semic... | 3.61 $ | 1000 | DIODE GEN PURP 300V 15A D... |
VS-1N3212R | Vishay Semic... | 3.61 $ | 1000 | DIODE GEN PURP 400V 15A D... |
1N3214R | GeneSiC Semi... | 3.75 $ | 1000 | DIODE GEN PURP REV 600V 1... |
1N3209R | GeneSiC Semi... | 3.82 $ | 1000 | DIODE GEN PURP REV 100V 1... |
1N3209 | GeneSiC Semi... | 3.83 $ | 1000 | DIODE GEN PURP 100V 15A D... |
1N3211 | GeneSiC Semi... | 3.83 $ | 1000 | DIODE GEN PURP 300V 15A D... |
1N3211R | GeneSiC Semi... | 3.83 $ | 1000 | DIODE GEN PURP REV 300V 1... |
1N3212R | GeneSiC Semi... | 3.83 $ | 1000 | DIODE GEN PURP REV 400V 1... |
VS-1N3214R | Vishay Semic... | 3.93 $ | 1000 | DIODE GEN PURP 600V 15A D... |
VS-1N3213 | Vishay Semic... | 4.43 $ | 1000 | DIODE GEN PURP 500V 15A D... |
1N3213 | GeneSiC Semi... | 4.7 $ | 1000 | DIODE GEN PURP 500V 15A D... |
1N3208 | GeneSiC Semi... | 5.16 $ | 1000 | DIODE GEN PURP 50V 15A DO... |
1N3213R | GeneSiC Semi... | 5.41 $ | 1000 | DIODE GEN PURP REV 500V 1... |
1N3290 | Vishay Semic... | 11.21 $ | 1000 | DIODE GEN PURP 300V 100A ... |
1N3263 | Powerex Inc. | 33.87 $ | 1000 | DIODE GEN PURP 200V 160A ... |
1N3263R | Powerex Inc. | 33.87 $ | 1000 | DIODE GEN PURP 200V 160A ... |
1N3264 | Powerex Inc. | 34.57 $ | 1000 | DIODE GEN PURP 250V 160A ... |
1N3264R | Powerex Inc. | 34.57 $ | 1000 | DIODE GEN PURP 250V 160A ... |
1N3265 | Powerex Inc. | 35.25 $ | 1000 | DIODE GEN PURP 300V 160A ... |
1N3265R | Powerex Inc. | 35.25 $ | 1000 | DIODE GEN PURP 300V 160A ... |
1N3260 | Powerex Inc. | 33.17 $ | 1000 | DIODE GEN PURP 50V 160A D... |
1N3260R | Powerex Inc. | 33.17 $ | 1000 | DIODE GEN PURP 50V 160A D... |
1N3261 | Powerex Inc. | 33.17 $ | 1000 | DIODE GEN PURP 100V 160A ... |
1N3261R | Powerex Inc. | 33.17 $ | 1000 | DIODE GEN PURP 100V 160A ... |
1N3262 | Powerex Inc. | 33.17 $ | 1000 | DIODE GEN PURP 150V 160A ... |
1N3262R | Powerex Inc. | 33.17 $ | 1000 | DIODE GEN PURP 150V 160A ... |
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