Allicdata Part #: | 1N3306RB-ND |
Manufacturer Part#: |
1N3306RB |
Price: | $ 23.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 7.5V 50W DO5 |
More Detail: | Zener Diode 7.5V 50W ±5% Chassis, Stud Mount DO-5 |
DataSheet: | 1N3306RB Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 20.86150 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 7.5V |
Tolerance: | ±5% |
Power - Max: | 50W |
Impedance (Max) (Zzt): | 0.3 Ohms |
Current - Reverse Leakage @ Vr: | 125µA @ 5V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 10A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Base Part Number: | 1N3306 |
Description
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The 1N3306RB zener diode is a single-terminal electronic device, primarily used for its function of voltage stabilization. It is able to regulate voltage over a range of settings, and is ideal for use in complex circuits and devices.The 1N3306RB is a general-purpose, “medium power” configuration, and is primarily used in applications that require large amounts of energy, such as large-power fast digital hand-switches, switching power supplies, cathode ray tubes, and other electronic devices and circuits.The 1N3306RB exhibits excellent thermal stability, making it suitable for high-temperature, high-power applications. Its junction temperature coefficient is low, and so it is also suitable for applications that require stable voltage over a wide temperature range. The zener\'s capacitance is also very low, making it suitable for applications with high-frequency switching, as it reduces the rate of voltage-drop with high frequencies.The working principle of the 1N3306RB is based on the phenomenon of electrical breakdown. When the reverse bias voltage exceeds a certain threshold level, the electric field intensity at the junction of the diode becomes high enough to cause electrons to flow in the reverse direction. This creates a conducting path through the diode, which is called a zener breakdown multiplier. This effect creates a voltage across the diode that remains constant, regardless of current. The zener voltage is determined by the material and physical characteristics of the junction, and is said to be “clamped” at a certain value.This clamped value is referred to as the “zener voltage” of the 1N3306RB, and is typically in the range of 6.2 V to 6.8 V. The zener voltage can be adjusted in two ways: by increasing the reverse bias voltage, or by changing the zener voltage by changing the temperature coefficient of the junction, or by changing the doping concentration of the junction.The 1N3306RB is used primarily for applications that require stable and adjustable voltage. Typical applications include radio transmitters, regulated power supplies, voltage regulators, voltage stabilizers, and signal level shifters. The 1N3306RB can also be used for general purpose operation where its low forward voltage drop and low reverse voltage characteristics are of benefit.The 1N3306RB can also be used in series with other diodes, both power and signal. This is because it functions as an energy-storage device, capable of storing and releasing energy depending on the current that flows in the circuit.In summary, the 1N3306RB is a general-purpose medium-power zener diode, primarily used for its function of voltage stabilization. Its advantages include its low junction temperature coefficient, high thermal stability, low capacitance, and ability to withstand high surge currents. The diode is ideal for applications which require a stable and adjustable voltage, such as radio transmitters, regulated power supplies, and signal level shifters. It can also be used in series with other diodes, both power and signal, to act as an energy-storage device.The specific data is subject to PDF, and the above content is for reference
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