Allicdata Part #: | 1N3313RB-ND |
Manufacturer Part#: |
1N3313RB |
Price: | $ 23.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 14V 50W DO5 |
More Detail: | Zener Diode 14V 50W ±5% Chassis, Stud Mount DO-5 |
DataSheet: | 1N3313RB Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 20.86150 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 14V |
Tolerance: | ±5% |
Power - Max: | 50W |
Impedance (Max) (Zzt): | 1.2 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 11.4V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 10A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Base Part Number: | 1N3313 |
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The 1N3313RB is a widely used single Zener diode. It is a device used to regulate electrical current and protect electronic circuits. It is formed by creating a junction between two types of semiconductors - p-type, and n-type - which willl be explained in greater detail below. In this article, we will explain the application field and working principle of the 1N3313RB.
Application Field
The 1N3313RB is typically used for voltage regulation for DC circuits. It is suitable for a range of applications, including AC-DC conversion, over-voltage protection, and noise suppression. It is also used in a range of audio-visual equipment, such as CRTs and LCDs, as well as in computers, cameras, and industrial automation.
Working Principle
To understand the operation of the 1N3313RB, it is necessary to first understand the structure and composition of the device. The device is made up of a positive material, known as “p-type”, and a negative material, known as “n-type”. P-type materials are composed of electrons and holes, while n-type materials are composed of electrons only. These materials are joined together in a way that creates two distinct layers - p -type and n-type - which are called the “junction”.
The 1N3313RB is a voltage-regulated diode, meaning that it maintains a predetermined voltage across itself when a certain amount of current flows through it. When the current through the device exceeds the rated current, the device will turn on, or “break down” and allow the current to flow. The current through the device is then regulated at the predetermined voltage, thus providing the desired voltage regulation.
The g π function is a basic function of the 1N3313RB. This function enables the chip to provide protection to the circuit by carrying the current away from the circuit at a rate proportional to the applied voltage. This is essentially the same process as what is known as a “breakdown” voltage.
The 1N3313RB is a useful device, as it can be used to regulate voltages in a wide range of applications. It is also useful for providing circuit protection, by allowing the current from an over-voltage to be diverted away from the circuit. In addition, it is also useful for noise suppression, as the device will reduce the amount of current that can be conducted by the circuit at any given time.
In summary, the 1N3313RB is a widely used single Zener diode. It is primarily used for voltage regulation and circuit protection, and provides a useful function for noise suppression. It consists of two materials - p-type and n-type - which create two distinct layers, or junction. When the current through the device exceeds the rating, the device will break down and regulate the voltage according to a predetermined level. It is an incredibly useful device and is suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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