Allicdata Part #: | 1N3312A-ND |
Manufacturer Part#: |
1N3312A |
Price: | $ 23.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 13V 50W DO5 |
More Detail: | Zener Diode 13V 50W ±10% Chassis, Stud Mount DO-5 |
DataSheet: | 1N3312A Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 20.86150 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 13V |
Tolerance: | ±10% |
Power - Max: | 50W |
Impedance (Max) (Zzt): | 1.1 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 9.9V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 10A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Base Part Number: | 1N3312 |
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A 1N3312A is a popular, yet basic, 3.6V Zener diode. The device also contains a 30mA maximum power rating, a 5% tolerance, and an operating temperature range of -55°C to +150°C. A Zener diode is created to conduct electricity in one direction and to best protect devices from voltage surges. To do this, it is reversed biased, or forward biased, in a circuit. When it is reverse biased, it acts similarly to a regular diode, which drops the voltage from the power source. However, when forward biased, and the voltage across it is exceeding the breakdown voltage of the device, the device will begin to conduct current. The current will reduce the voltage across the diode until it is equal to the rating of the diode and then beyond that, the reliance on the source’s voltage will drop until the device has a steady voltage across it.
1N3312A’s are popular in applications that need a consistent voltage, such as battery management systems, lightening protection circuits, or test equipment. The use of a 1N3312A allows for stable voltage inputs or outputs, and increases reliability in the circuitry. As the power rating of the device is limited, typically multiple devices are used in parallel in order to limit the overall load-current.
The composition of a 1N3312A is similar to other zener diodes, with the diode built up of two layers of heavily doped semiconductors, one anode and one cathode. This separates the two oils ionically, creating a semiconductor junction. To make this a Zener diode, doping is used to create a soft breakdown part in the junction. The voltage, that the diode is rated at, corresponds to the amount of breakdown parts present in the junction. When reverse-biased, the diode creates electric field lines that help to keep the junction separate. The electric field lines will increase in magnitude until they exceed the breakdown voltage at the area of the junction with the most breakdown parts. Once this point is reached it is possible for current to flow. During the forward-biased process, the electric field lines will steadily drop as current flows through the Zener diode.
In conclusion, the 1N3312A is a popular and basic Zener diode. Its wide-spread use is due in part to its simple construction, its consistent performance at low prices, and its ability to protect other devices from voltage surges. The breakdown process allows the device to maintain a steady voltage level in a circuit, though the power is limited and thus multiple diodes may need to be used in parallel. Overall, the 1N3312A is a perfect choice for many applications, whether they are battery management systems, protection circuits, or test equipment, because of its simple assembly and reliable performance.
The specific data is subject to PDF, and the above content is for reference
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