Allicdata Part #: | 1N3312BE3-ND |
Manufacturer Part#: |
1N3312BE3 |
Price: | $ 22.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 13.0V 50W DO-5 |
More Detail: | Zener Diode 13V 50W ±5% Stud Mount DO-5 |
DataSheet: | 1N3312BE3 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 19.90450 |
Series: | -- |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 13V |
Tolerance: | ±5% |
Power - Max: | 50W |
Impedance (Max) (Zzt): | 1.1 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 9.9V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 10A |
Operating Temperature: | -65°C ~ 175°C (TA) |
Mounting Type: | Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
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1N3312BE3 Application Field and Working Principle
The 1N3312BE3 is a voltage-regulation diode from the 1N33x series of diodes manufactured by ON Semiconductor. It is classified as a Zener Diode, and is among the most popular in their lineup. It is a single-section diode, which means it consists of a single, one-layer device. These diodes are split into two major applications: voltage regulation and over-voltage protection.
Application Field
The 1N3312BE3 Zener Diode can be used in a wide range of applications, including industrial, telecom, defense, and automotive systems. They are mainly used in voltage-regulation circuits, such as DC-DC converters, switching power supplies, motor drives, and base station monitoring systems. The 1N3312BE3 diode is a low-power device, so it is not usually suitable for applications that require a high-power rating.
The 1N3312BE3 Zener Diode can also be used for over-voltage protection. This is accomplished by connecting the anode and cathode terminals of the diode in a reverse-biased circuit. When an over-voltage condition occurs, current starts to flow from the anode to the cathode, thereby limiting the voltage to a specified value. This application is commonly used in power systems, such as lighting systems and power transformers.
Working Principle
When the 1N3312BE3 Zener Diode is in its reverse-biased condition, the depletion region between the anode and cathode acts like a barrier, preventing the flow of electrons. Under such conditions, the electrons are unable to flow through the diode, and a voltage drop is created across the diode (equivalent to the Zener voltage of the diode).
Once the voltage across the diode reaches the Zener voltage level (or higher), electrons start to tunnel through the barrier and current begins to flow through the diode. This causes a voltage drop across the diode and prevents the voltage from getting any higher, thereby regulating the output voltage.
The 1N3312BE3 diode also has a breakdown voltage associated with it. This is the voltage at which current suddenly increases through the diode. It is important to note that this sudden increase in current can cause severe damage to the diode, so it is important to ensure that the voltage does not exceed the rated limit.
In summary, the 1N3312BE3 Zener Diode is a single-section diode that can be used for voltage-regulation and over-voltage protection in a wide range of applications. It is important to note the Zener voltage, breakdown voltage, and power rating of the diode to ensure safe and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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