
Allicdata Part #: | 1N3326A-ND |
Manufacturer Part#: |
1N3326A |
Price: | $ 23.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 36V 50W DO5 |
More Detail: | Zener Diode 36V 50W ±10% Chassis, Stud Mount DO-5 |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 20.86150 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 36V |
Tolerance: | ±10% |
Power - Max: | 50W |
Impedance (Max) (Zzt): | 3.5 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 27.4V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 10A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Base Part Number: | 1N3326 |
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The 1N3326A diode is part of the Zener diode type, specifically a single diode. Zener diodes are a type of diode that allows current to flow in one direction, but enables wider voltage control compared to standard diodes by allowing current to flow in the opposite direction when enough voltage is applied in the forward direction. This is known as the Zener Breakdown effect.
The 1N3326A is a General Purpose Low Leakage Zener that can handle a maximum power dissipation of 500mw. It has an average rectification efficiency of 85-90% and a very low leakage current, making it ideal for a range of voltage regulation applications.
The 1N3326A is primarily used in voltage regulation applications. It is used to stabilize the output voltage of a power supply by clamping the output voltage to the Zener diode\'s breakdown voltage. The breakdown voltage can be set to whatever the requirements of the application are. In addition, the 1N3326A can be used in astable circuits, in reverse polarity protection, as a transient voltage suppressor, and in voltage reference applications.
The breakdown voltage of the 1N3326A can be predetermined by choosing the appropriate zener diode. The breakdown voltage is determined by the diode’s doping level, which is the number of impurities in the diode’s semiconductor material. By changing the doping level, the breakdown voltage can be adjusted from nominally 4.3V to 7.5V.
The working principle of the 1N3326A is based on the Zener Breakdown effect. When a diode is forward biased, meaning that a positive voltage is applied to the anode and a negative voltage to the cathode, current flows from the anode to the cathode. In a standard diode, however, once a certain voltage threshold is reached no more current can pass through. In a Zener diode, when the breakdown voltage is applied in the forward direction, electrons in the valence band of the P-type semiconductor material become excited and fill the conduction band. This creates an electric field in the region around the junction and electrons are thus freed to move through the diode in the reverse direction. This effect is known as the Zener Breakdown effect.
In summary, the 1N3326A diode is a single Zener diode and is used primarily in voltage regulation applications. Its breakdown voltage is adjustable between 4.3V and 7.5V, depending on the doping levels of the semiconductor material. The working principle of the device is based on the Zener Breakdown effect, in which electrons are excited into the conduction band of the diode when the breakdown voltage is exceeded in the forward direction.
The specific data is subject to PDF, and the above content is for reference
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