
Allicdata Part #: | 1N3899R-ND |
Manufacturer Part#: |
1N3899R |
Price: | $ 28.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | FAST RECOVERY RECTIFIER |
More Detail: | Diode |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 25.52070 |
Series: | * |
Part Status: | Active |
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1N3899R is a common rectifier diode whose advantages and wide, versatile application field make it suitable for a range of applications, including power supplies, low- and high-frequency rectifiers, mounting fixtures, weld controls, and small signal amplification. 1N3899R was the first diode manufactured for use in solid-state circuitry (SSC), and has since become one of the most popular, most widely used components in SSC installations.
1N3899R is a glass, hermetically sealed device cut from a wafer of carefully purified silicon (Si). It contains a single Si p-n junction, or diode, able to convert AC current to DC current. The diode is encapsulated in a glass envelope, which helps protect the diode against extreme temperatures, pressure, and dust.
The glass envelope also provides insulation to help avoid electrical shock to the user. The diode itself is a thin, thin-film cylinder sealed off from the outside environment. Inside the cylinder are two thin-film layers of dielectric material, separated by a thin-film semiconductor layer. The semiconductor layer is connected to the other layers by a thin-film interconnect.
The composition of the thin-film layers of the diode determines how the diode acts in terms of current and voltage. In 1N3899R, the diode construction is designed to minimize the reverse-current flow and therefore minimize the power loss. When a voltage is applied across the diode, a current, I, is established that follows the equation:
I = kV^2
The "k" is a constant specific to the diode. The higher the k value, the higher the forward current, and thus the faster the response time of the diode. In a 1N3899R device, the k value is approximately 0.0624 Ampere squared per Volt. This is a reasonably high k value, which gives the diode a fast response time of less than a single reversible cycle.
When a voltage is applied to the anode of a 1N3899R diode, the diode lets current flow through the p-n junction if the applied voltage is greater than the threshold voltage of the diode. This is known as the forward biasing. When the voltage is lower than the threshold voltage, the diode is said to be in reverse bias, where the current is negative. The magnitude of the bias is determined by the size of the applied voltage.
When a voltage is applied to the anode of a 1N3899R diode, the current in the forward direction is relatively much larger than the current in the reverse direction. This feature is one of the main reasons why the 1N3899R is used as a rectifier diode. The diode can thus convert AC currents to DC. Additionally, the 1N3899R can also be used as a voltage regulator, as its forward current stays the same regardless of the magnitude of the applied voltage.
The 1N3899R is one of the most popular diodes available today due to its versatility. Its fast switching time and absorbent features make it ideal for various applications, including power supplies, low- and high-frequency rectifiers, mounting fixtures, weld control, and small signal amplification.
The specific data is subject to PDF, and the above content is for reference
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1N3880R | GeneSiC Semi... | 3.76 $ | 1000 | DIODE GEN PURP REV 100V 6... |
1N3882 | GeneSiC Semi... | 3.82 $ | 1000 | DIODE GEN PURP 300V 6A DO... |
1N3827A-1 | Microsemi Co... | 4.7 $ | 1000 | DIODE ZENER 5.6V 1W DO204... |
1N3827AUR-1 | Microsemi Co... | 6.32 $ | 1000 | ZENER DIODEZener Diode |
1N3893AR | Microsemi Co... | 21.89 $ | 1000 | FAST RECOVERY RECTIFIERDi... |
1N3893R | GeneSiC Semi... | 5.43 $ | 98 | DIODE GEN PURP REV 600V 1... |
1N3899R | Microsemi Co... | 28.36 $ | 1000 | FAST RECOVERY RECTIFIERDi... |
1N3882R | GeneSiC Semi... | 3.82 $ | 1000 | DIODE GEN PURP REV 300V 6... |
1N3889 | GeneSiC Semi... | 4.31 $ | 83 | DIODE GEN PURP 50V 12A DO... |
1N3879R | GeneSiC Semi... | 3.26 $ | 997 | DIODE GEN PURP REV 50V 6A... |
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1N3890A | Microsemi Co... | 21.89 $ | 1000 | FAST RECOVERY RECTIFIERDi... |
VS-1N3893 | Vishay Semic... | 4.76 $ | 15 | DIODE GEN PURP 400V 12A D... |
1N3826AUR-1 | Microsemi Co... | 6.32 $ | 1000 | ZENER DIODEZener Diode |
1N3826A-1 | Microsemi Co... | 4.7 $ | 1000 | DIODE ZENER 5.1V 1W DO204... |
VS-1N3892R | Vishay Semic... | 3.68 $ | 1000 | DIODE GEN PURP 300V 12A D... |
1N3892A | Microsemi Co... | 21.89 $ | 1000 | FAST RECOVERY RECTIFIERDi... |
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VS-1N3883 | Vishay Semic... | 3.61 $ | 1000 | DIODE GEN PURP 400V 6A DO... |
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