1N4737A,133 Allicdata Electronics
Allicdata Part #:

1727-1942-3-ND

Manufacturer Part#:

1N4737A,133

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE ZENER 7.5V 1W DO41
More Detail: Zener Diode 7.5V 1W ±5% Through Hole DO-41
DataSheet: 1N4737A,133 datasheet1N4737A,133 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.02911
10000 +: $ 0.02474
25000 +: $ 0.02328
50000 +: $ 0.02183
125000 +: $ 0.01940
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 7.5V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 4 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 5V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Base Part Number: 1N4737
Description

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Diodes are among the critical components in most electronics, as they allow current to flow in one direction while blocking it in the other. Zener diodes are a particular type of diode designed to “break down” and conduct current in reverse in a controlled manner when the reverse voltage reaches a certain level.

The 1N4737A is a single zener diode designed to produce a stable voltage of 133V. It has a power rating of 1W and is commonly used in voltage regulators and voltage reference circuits. It is also used in applications such as power supplies, DC-DC converters, laser diodes and linear voltage regulators.

The working principle of the 1N4737A is based on the concept of Zener breakdown. When the reverse biased voltage of a PN junction diode reaches a certain level, called the breakdown voltage, it breaks down, allowing current to flow in the reverse direction. The 1N4737A is designed to be stable and operate at a breakdown voltage of 133V, even under extreme temperatures and conditions.

The structure of the 1N4737A is different from other diodes due to its Zener diode design. It consists of a single PN junction diode where the N side is much thicker than the P side. This underlying structure gives the device its Zener characteristics. The P side forms a very thin but heavily doped junction layer, while the N side forms a much thicker but lightly doped junction layer. This allows current to flow in both directions while the reverse bias voltage is below the breakdown voltage.

The 1N4737A is designed to be thermally stable and able to operate at temperatures up to 150°C without any significant difference in its reverse voltage. This allows the device to be used in high temperature environments where other devices may not be suitable. The device also features a low dynamic impedance, which allows for high current surge capability.

The 1N4737A is an essential component in many electronics circuits, and can be used in a variety of applications from power supplies to DC-DC converters and laser diodes. Its unique structure allows it to produce a stable voltage of 133V with excellent temperature stability, making it a valuable component to have in any electronics project.

The specific data is subject to PDF, and the above content is for reference

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