1N4751A TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	30V
Tolerance:	±5%
Power - Max:	1W
Impedance (Max) (Zzt):	40 Ohms
Current - Reverse Leakage @ Vr:	5µA @ 22.8V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 200°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-41

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The 1N4751A TR is a single Zener diode designed for very specific current specifications and working conditions to work in a wide variety of applications. It is a component frequently used in power applications for regulating and controlling current.This Zener diode consists of a single component, a PN junction, on a semiconductor material that is formed through diffusion and diffusion-doped with n-type and p-type dopants, using different concentrations of dopants in the n- and p-type regions. This junction works as a diode which let the current flows in one direction only, but when the voltage applied to it is higher than its Punch-through Voltage (PZV), the current flows in reverse direction too, and may produce a breakdown. This phenomenon is called Zener Breakdown and that’s why it’s called Zener Diode.In the case of 1N4751A TR Zener Diode, this breakdown voltage is between 3.3V to 30V when the current is limited to 1A. This satisfies the low voltage and low current requirements, making it suitable for general-purpose applications. The 1N4751A TR also has a unique structure that allows it to have a low profile and high thermal stability.The 1N4751A TR can be used in applications ranging from data communications and power management, to power supplies and control systems. Its application fields include generator rectifier protection, injector control, and in-vehicle entertainment systems.The main working principle of the 1N4751A TR Zener diode is based on two functions. The first one, known as ‘forward biased conduction’, is used when the applied voltage is below the punch-through or cut-in voltage of the diode. This produces a current flow from the anode to the cathode. The second function is known as ‘Zener Breakdown’ and occurs when the applied voltage is higher than the Zener Breakdown or Zener Voltage of the diode, producing a current flow in the opposite direction, from the cathode to the anode.The 1N4751A TR Zener diode’s performance depends on the characteristics of the device. Some of the main characteristics are the forward-biased voltage drop (Vf), the Zener breakdown voltage (VZ), the Zener breakdown current (IZ), the Zener resistance (RZ), and the Forward-biased saturation current (IF). All these characteristics together determine the performance of the diode and must be taken into account when selecting a device for a specific application.The 1N4751A TR Zener diode also has a low capacitance value that helps reduce current spikes and noise from the circuit, and its high power-surface production ensures its good thermal stability. It can be used in various combinations to provide efficient protection for components and circuits.Finally, this Zener diode also has a long lifetime and is designed to withstand high temperatures, making it very suitable for automotive and industrial applications. Its low profile and its good resistance to noise ensures its compatibility with different circuits and applications.The 1N4751A TR is a well-built, reliable and easy to use Zener diode that can be employed in a wide range of applications. It has a unique structure that improves its performance and lifetime, and its low profile and thermal stability make it suitable for use in automobile and other industries. With its good performance, low capacitance and noise protection, and long lifetime, the 1N4751A TR is the ideal Zener diode for any application.

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