
Allicdata Part #: | 1N4760AG-ND |
Manufacturer Part#: |
1N4760A G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 68V 1W DO204AL |
More Detail: | Zener Diode 68V 1W ±5% Through Hole DO-204AL (DO-4... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 68V |
Tolerance: | ±5% |
Power - Max: | 1W |
Impedance (Max) (Zzt): | 150 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 51.7V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
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The 1N4760A G is a single zener diode with a high power dissipation capability and is designed to become an economical choice for the application of general purpose zener regulation. This type of diode has a wide range of applications and can take many forms from single diode to diode array, as well as from low power to high power applications. By understanding the working principle of the device, it is possible to identify the areas where the 1N4760A G device can be used in different applications.
The 1N4760A G is based on Zener Diode Technology, which utilizes the principle of Avalanche Breakdown of a reverse-biased semiconductor diode when it is exposed to a high level of reverse voltage. This principle gives the diode a unique behavior where it acts as an open circuit in the forward bias mode and as a short circuit in the reverse bias mode. In other words, the diode will not allow current to flow across it in forward bias, but when it is exposed to a certain level of reverse voltage, the diode will break down, allowing the current to flow across it in the reverse bias. This breakdown voltage, known as the Zener voltage, can be established by controlling the doping concentrations in the diode.
The 1N4760A G device has a wide array of applications ranging from voltage regulation to surge protection. The principal use for this semiconductor device is for stabilizing the operating voltage in a variety of circuits. When used in this fashion, the 1N4760A G diode is connected to an input voltage source as well as to a load, with the diode positioned between these two components so that the diode can limit the input voltage to a set level by clamping it at a certain level when an excessive voltage is encountered. This setup is known as voltage regulation, and it ensures that the operating voltage of the circuit does not exceed the specified level.
The 1N4760A G can also be used in amplifier circuits to stabilize the signal voltage. Here, the diode acts as a shunting element to protect the amplifier stage against any over-voltage signals. Additionally, the diode can be used as a clamp in oscillator circuits as well as start-up circuits. The diode enables these circuits to function as required by clamping the voltage and preventing it from exceeding the specified level.
The 1N4760A G diode can also be used for surge protection. In this application, the diode is connected to a module or system as a shunt or protection element. As the power level of the system changes, the diode will sense the difference in voltage levels and instantly conduct the excess energy away from the device, thus protecting it from any sudden over voltage and ensuring its safe operation.
Apart from these basic applications, the 1N4760A G can be used in numerous other circuits, including memory protection circuits. In such cases, the diode acts as an integrator and limits the current by limiting the voltage, thus ensuring efficient operation of the system. The 1N4760A G can also be used as a current regulator in switching power supplies, as it limits the current by clamping the voltage.
Ultimately, the 1N4760A G is a convenient and economical way of protecting a wide range of circuits from potential over voltage and over current damage. By understanding the working principle of the diode, it is possible to identify the areas where the 1N4760A G device can be employed for various circuit protection needs.
The specific data is subject to PDF, and the above content is for reference
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1N4747A-T50A | ON Semicondu... | 0.04 $ | 1000 | DIODE ZENER 20V 1W DO41Ze... |
1N4761A R0G | Taiwan Semic... | 0.05 $ | 1000 | DIODE ZENER 75V 1W DO204A... |
1N4756E3/TR13 | Microsemi Co... | 0.42 $ | 1000 | DIODE ZENER 47V 1W DO204A... |
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1N4738 G | Microsemi Co... | 0.0 $ | 1000 | DIODE ZENER 8.2V 1W DO204... |
1N4763A-TR | Vishay Semic... | -- | 5000 | DIODE ZENER 91V 1.3W DO41... |
1N4733A-T50R | ON Semicondu... | 0.04 $ | 1000 | DIODE ZENER 5.1V 1W DO41Z... |
1N4752ATA | SMC Diode So... | 0.04 $ | 2500 | DIODE ZENER 33V 1W DO41Ze... |
1N4746A TR | Central Semi... | 0.07 $ | 1000 | DIODE ZENER 18V 1W DO41Ze... |
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1N4740A R0G | Taiwan Semic... | 0.05 $ | 1000 | DIODE ZENER 10V 1W DO204A... |
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1N4744CP/TR8 | Microsemi Co... | 1.25 $ | 1000 | DIODE ZENER 15V 1W DO204A... |
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