1N4737P/TR8 Allicdata Electronics
Allicdata Part #:

1N4737P/TR8-ND

Manufacturer Part#:

1N4737P/TR8

Price: $ 1.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 7.5V 1W DO204AL
More Detail: Zener Diode 7.5V 1W ±10% Through Hole DO-204AL (DO...
DataSheet: 1N4737P/TR8 datasheet1N4737P/TR8 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.94000
Stock 1000Can Ship Immediately
$ 1.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 7.5V
Tolerance: ±10%
Power - Max: 1W
Impedance (Max) (Zzt): 4 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 5V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 1N4737
Description

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A 1N4737P/TR8 diode is part of the Zener diode family, which are utilized in a variety of applications involving controlling and stabilizing circuits in radios, television systems, and other types of electronic circuits. Zener diodes like the 1N4737P provide a cost-effective solution for regulating a higher reverse voltage than a conventional diode.

Features

The 1N4737P/TR8 is a 3-terminal (anode, cathode and case) silicon Zener diode with a 5.1V breakdown voltage suitable for use in applications that require a lower breakdown voltage than a standard diode. The diode has a reverse voltage of 5.1V and a power rating of 500 mW. In addition, the Zener diode has a junction temperature of 125 C, a maximum reverse current of 10 mA, and a maximum forward voltage drop of 1.2V. The 1N4737P/TR8 also has a noise immunity to 5V clamping, which allows it to withstand transient voltage spikes that may occur during electrical disturbances, such as in the power supply line.

Working Principle

The working principle of a 1N4737P/TR8 diode is based on the two-layer structure of semiconductors, which enable them to conduct current in both directions. A 1N4737P/TR8 diode consists of a n-type and a p-type semiconductor layer. When an external voltage is applied, the layers of the diode combine, forming a junction. The diode works in two possible modes: forward and reverse.

In forward bias mode, the diode acts like a normal diode, allowing current to flow from anode to cathode. However, when the voltage applied to the diode reaches a critical value, the diode begins to conduct in reverse bias mode. In reverse bias mode, the voltage applied to the diode reverse-biases the junction, causing the diode to conduct in the opposite direction. This phenomenon is known as Zener breakdown and is responsible for the diode’s stabilizing and controlling function within electronic circuits.

Application Fields

1N4737P/TR8 diodes are commonly utilized in a wide range of applications that require regulating a higher reverse voltage than a standard diode. For example, these diodes are used in television systems to provide a stable reference voltage, in radios to protect loudspeakers from excess current, and in power supplies to provide voltage regulation. They can also be used to protect sensitive electronic components from momentary voltage spikes and maintain a steady voltage signal. In addition, 1N4737P/TR8 diodes are also used in solar and wind power applications, where they help regulate the output of renewable energy sources.

Conclusion

1N4737P/TR8 diodes are commonly used in a wide variety of applications that require regulating a higher reverse voltage than a standard diode. These diodes provide a cost-effective and efficient solution for stabilizing and controlling circuits. In addition, the 1N4737P/TR8 has noise immunity to 5V clamping and is rated for a power rating of 500 mW. This makes it an ideal choice for use in applications such as radios, televisions, and power supplies.

The specific data is subject to PDF, and the above content is for reference

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