1N4747A_S00Z

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The 1N4747A_S00Z is a single discrete Zener diode that has wide variety of applications and works depending on the regulation of an avalanche effect. The 1N4747A_S00Z is a 3.3V voltage regulator made of silicon wafer, notable for its small size, that is part of the diode family that is responsible for allowing electricity to pass in one direction. In order for the 1N4747A_S00Z to make sure that there is proper conduction of electricity in one direction, it utilizes an anode terminal and a cathode terminal.

The anode terminal is the positive terminal and is marked with a stripe and within the 1N4747A_S00Z is the electron. The electron travels from the anode terminal where it is positively charged and into the center of the diode where it is zapped and becomes a part of the Zener junction. The Zener junction acts as a barrier between electrons and allows the electrons to regulate the flow of electricity.

The 1N4747A_S00Z can handle a power dissipation of 500mW at 25°C and a maximum reverse voltage of 3.3 volts. The maximum regeneration voltage is up to 5 volts. The forward current on the diode is a maximum of 7mA. In terms of temperature, the peak reverse power dissipation is 25oC and the operating junction temperature range can range from -65 to +175 Degrees Centigrade.

The 1N4747A_S00Z has a variety of applications and is used in a variety of devices. The 1N4747A_S00Z works in something called a voltage dropping circuit which is used to help lower a voltage. These circuits are frequently used in computers, mobile phones, tablets, and other devices. It is also used in LED lighting, in radio receivers, and in audio amplifiers. Additionally, it can be used in batteries and solar energy apparatus, providing an alternate energy source.

The 1N4747A_S00Z is highly effective and efficient in regulating current to a specific power or voltage. It works through an avalanche effect, which occurs when the reverse voltage applied by the diode drops to a certain voltage. This causes electrons to travel in a high-energy avalanche through the junctions of the diode, resulting in the regulation of the current. This makes the 1N4747A_S00Z highly reliable and effective in many applications.

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