1N4749A-T50R Discrete Semiconductor Products

Diodes - Zener - Single

The 1N4749A-T50R is a single zener diode constructed of silicon semiconductor material and encapsulated in a DO-35 package. It is a small signal zener diode with a low power silicon planar epitaxial structure with two parts. The anode is the main part which consists of a silicon body and an aluminum shell, while the cathode is composed of an aluminum shell and an epoxy insulator. The 1N4749A-T50R package provides an isolating optional terminal between the anode and cathode of the diode, and is suitable for applications with a temperature range of -65 to +175°C.

Application Field

The 1N4749A-T50R Zener diode is mainly used in digital circuits, where it is used as a voltage regulator. It provides an adjustable voltage between 0.2 and 34 volts and can be used to hold a voltage level on digital displays and circuitry. They are also often used to clamp various voltages in oscillator circuits, as an alternative to a reverse-biased diode, in order to limit the maximum allowable voltage.

1N4749A-T50R diodes can also be employed in military and aerospace applications as an electrostatic discharge (ESD) protection device. It usually finds its use in these applications where its low power, small size makes it a preferred choice for protecting sensitive circuits and components from voltage induced damage.

Working Principle

The 1N4749A-T50R is a zener diode, and its operation is based on the reverse-biased zener breakdown effect, which theoretically occurs when the reverse-biased voltage across the zener diode exceeds the zener voltage (Vz). When this happens, the diode’s voltage drops from a high reverse voltage to a low forward voltage due to the sudden discharging of the breakdown current.

The 1N4749A-T50R is designed to provide a very precise current-voltage characteristic, which allows it to provide a highly stable voltage over a wide range of currents. This is due to its high electrical insulation, which prevents the voltage across the diode from fluctuating heavily at different currents. This ensures a very reliable voltage reference for digital circuits and ESD protection in aerospace and military applications.

Conclusion

The 1N4749A-T50R diode is a single zener diode designed using a low-power silicon planar epitaxial structure. It is mainly used in digital circuits as a voltage regulator, as well as for ESD protection in military and aerospace applications. It shows good electrical insulation performance at different currents and provides a highly stable voltage over wide ranges of current. This makes the 1N4749A-T50R a preferred choice for low power applications.