Allicdata Part #: | 1N4749GA0G-ND |
Manufacturer Part#: |
1N4749G A0G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 24V 1W DO204AL |
More Detail: | Zener Diode 24V 1W ±5% Through Hole DO-204AL (DO-4... |
DataSheet: | 1N4749G A0G Datasheet/PDF |
Quantity: | 1000 |
12000 +: | $ 0.03315 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 24V |
Tolerance: | ±5% |
Power - Max: | 1W |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 18.2V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
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1N4749G A0G Diodes come in Single Zener form, and are a popular choice for applications that require robustness and reliability in a compact package. These devices essentially modify electrical current in an orderly manner, providing stable and consistent power delivery in commercial, industrial, medical, and military applications.
These devices are able to provide electrical isolation and power conversion for systems in both AC and DC applications. They are designed to provide surge protection in high-voltage usages, with the ability to dissipate transient spikes of up to 1000V without damage. Such excellent surge protection capability allows their use in a variety of applications, such as inverters, HVAC systems, telecommunications equipment, industrial control equipment, and more.
As a single-zener diode, the 1N4749G A0G offers both 0.5W and 1W options, allowing users to choose the device that best suits their application. The 0.5W Zener provides a maximum peak current of 180mA and the 1W Zener provides a maximum peak current of 360mA. Additionally, the single-zener diode offers a maximum peak repetitive reverse voltage of 175V.
The 1N4749G A0G has a typical voltage drop of 3.3V and a temperature coefficient of 7.5mV/°C. The device has a breakdown voltage of 6.8V for a 0.5W and 6.9V for a 1W application. It also has a maximum operating temperature of 85°C.
The working principle of 1N4749G A0G is based on the effect known as the avalanche breakdown. When the applied reverse voltage across the device exceeds the junction\'s breakdown voltage, the dielectric of the diode breaks down, allowing a current to flow through the device. This current is known as an avalanche current, hence this mode of operation is referred to as avalanche breakdown. After the initial breakdown, the current increases exponentially due to the large number of minority carriers created by the impact ionization of the avalanche current.
This avalanche breakdown has two important applications in power conversion: (1) creating a controlled current path in the circuit, and (2) suppressing unwanted high voltages from forming in the circuit. In the 1N4749G A0G, the device works in conjunction with a resistor or a capacitor to create a precise current path for the circuit. Additionally, the device can be used to keep a steady forward voltage across a circuit, thereby suppressing high-voltage spikes.
The 1N4749G A0G is a reliable and dependable single-zener diode that is widely used in many commercial, industrial, medical and military applications. Its avalanche breakdown working principle is able to provide excellent surge protection in high-voltage applications. The device also provides precise current paths and a steady operating voltage, making it a popular choice for operations that require stability and reliability.
The specific data is subject to PDF, and the above content is for reference
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