| Allicdata Part #: | 1N4754A-ND |
| Manufacturer Part#: |
1N4754A |
| Price: | $ 0.20 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | DIODE ZENER 39V 1W DO41 |
| More Detail: | Zener Diode 39V 1W ±5% Through Hole DO-41 |
| DataSheet: | 1N4754A Datasheet/PDF |
| Quantity: | 10078 |
| 1 +: | $ 0.17640 |
| 10 +: | $ 0.14301 |
| 100 +: | $ 0.07579 |
| 500 +: | $ 0.04986 |
| 1000 +: | $ 0.03391 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 39V |
| Tolerance: | ±5% |
| Power - Max: | 1W |
| Impedance (Max) (Zzt): | 60 Ohms |
| Current - Reverse Leakage @ Vr: | 5µA @ 29.7V |
| Operating Temperature: | -65°C ~ 200°C |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AL, DO-41, Axial |
| Supplier Device Package: | DO-41 |
| Base Part Number: | 1N4754 |
Description
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Diodes - Zener - Single
The 1N4754A is a silicon, axial-terminal zener diode, with a rated zener voltage of 5.1V. It is primarily used as a voltage regulator, such as in regulating the charging and discharging of batteries and other electronic circuits. Specifically, the 1N4754A can be placed in a circuit in series with the load, allowing for any extra energy created in the discharge phase of the circuit to be dissipated.The 1N4754A operates on the principle of electrical breakdown of the semiconductor p-n junction. When the forward voltage applied to the semiconductor, either from an external circuit or from the reverse-biasing of the junction, exceeds a certain threshold, known as the breakdown voltage, current will flow through the device regardless of the polarity of the applied voltage. This breakdown voltage serves as the basis for the rated zener voltage of the device. When a reverse bias is applied to the 1N4754A diode, electric compressive force is created, pushing the electrons and the holes, or electric carriers, together in an attempt to reduce the width of the depletion layer. As the reverse electric field increases in intensity, the carriers are pushed increasingly closer together, causing an increase in potential electric field, or higher voltages, between them. Once this critical voltage is reached, carriers become accelerated to the point where they jump across the barrier, producing a current. This current continues to flow until the zener voltage is reached. At this point, the current flows at a constant rate while the zener voltage remains constant, preventing further increase in voltage across the junction, thus regulating the voltage. The 1N4754A can also be used for the protection of other components in a circuit. This device can be placed in series with those components to act as a voltage clamp. Should the voltage exceed the breakdown voltage, the 1N4754A will cause a supplementary current flow that keeps the voltage across the component to a safe level. In summary, the 1N4754A is a silicon, axial-terminal zener diode that works on the principle of electrical breakdown. It is used as a voltage regulator and to protect other components in a circuit. It ensures the voltage remains within the breakdown voltage level to protect components from damage while also providing a constant voltage across its terminals.The specific data is subject to PDF, and the above content is for reference
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1N4754A Datasheet/PDF