| Allicdata Part #: | 1N4758A-TPTR-ND |
| Manufacturer Part#: |
1N4758A-TP |
| Price: | $ 0.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Micro Commercial Co |
| Short Description: | DIODE ZENER 56V 1W DO41G |
| More Detail: | Zener Diode 56V 1W ±5% Through Hole DO-41G |
| DataSheet: | 1N4758A-TP Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.04167 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 56V |
| Tolerance: | ±5% |
| Power - Max: | 1W |
| Impedance (Max) (Zzt): | 110 Ohms |
| Current - Reverse Leakage @ Vr: | 5µA @ 42.6V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
| Operating Temperature: | -65°C ~ 200°C |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AL, DO-41, Axial |
| Supplier Device Package: | DO-41G |
| Base Part Number: | 1N4758 |
Description
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The 1N4758A-TP Zener diode is a type of diode designed for voltage regulation and protection for electronic components. It is a single shot device, meaning it only works once and its operation process cannot be continued or repeated. As such, it only performs for a fraction of a second or for an extremely short period of time. This makes the 1N4758A-TP ideal for applications such as transient overvoltage protection, ESD (electrostatic discharge) protection, or surge protection.The 1N4758A-TP diode operates in two distinct ways. In the forward bias state, current is allowed to pass through the diode until it reaches its rated breakdown voltage. The capacitance of the junction region is also non-zero in the forward bias mode, meaning it can be used to minimize spikes in the current waveform or for storage. In the reverse bias state, the same voltage breakdown works in the reverse direction to prevent current from passing through the diode.A key factor in understanding the operation of the 1N4758A-TP diode is its Zener breakdown voltage, which is the voltage at which the diode will begin to conduct current in reverse. The Zener breakdown is a quantum mechanical effect that occurs when a reverse electric field is applied to the junction region of the diode. As this electric field becomes stronger, electrons in the junction begin to cross the region, forming a conductive path across the junction. This is what causes the device to switch from non-conductive to conductive.The 1N4758A-TP diode’s breakdown voltage is typically between 9.1 and 10.3 volts, with a maximum of +/- 3 percent variation. This makes it ideal for applications such as: supporting negative voltage rails in microprocessors, providing overvoltage protection for sensitive devices, replacing cold cathode tubes, providing power to field-programmable devices, providing an ac dropout for dc power supplies, or providing a low forward voltage drop for LED current limitation.In summary, the 1N4758A-TP is a type of Zener diode designed to provide voltage regulation and protection for electronic components. It has a breakdown voltage of between 9.1 and 10.3 volts and its operation can be described in terms of forward and reverse bias states, with current allowed to pass through in the forward bias state and prevented from passing in the reverse bias state. It is ideal for applications such as transient overvoltage protection and ESD protection, as well as for providing an ac dropout for dc power supplies and LED current limitation.
The specific data is subject to PDF, and the above content is for reference
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1N4758A-TP Datasheet/PDF