Allicdata Part #: | 1N4897A-ND |
Manufacturer Part#: |
1N4897A |
Price: | $ 28.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 12.8V 400MW DO7 |
More Detail: | Zener Diode 12.8V 400mW ±5% Through Hole DO-7 |
DataSheet: | 1N4897A Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 25.99700 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 12.8V |
Tolerance: | ±5% |
Power - Max: | 400mW |
Impedance (Max) (Zzt): | 400 Ohms |
Operating Temperature: | -55°C ~ 100°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AA, DO-7, Axial |
Supplier Device Package: | DO-7 |
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1N4897A is a Zener single diode manufactured by On Semiconductor. It is designed to protect against electrostatic discharge (ESD). It can be used in an array of voltage-clamping applications, as it provides an avalanche breakdown voltage of 5.6 V when reverse-biased.
The 1N4897A\'s core applications include ESD protection for consumer and industrial electronics, power drivers, and power systems. This diode\'s low breakdown voltage makes it suitable for use in low-voltage applications, such as battery protection circuits, memory, and logic circuits.
The 1N4897A is conducive to a variety of applications, and can be found in many electronic devices. It is commonly used in communication systems, automotive electronics, gaming systems, LED displays and lighting, video/audio equipment, medical systems, and portable PC parts.
The core working principle of the 1N4897A is based on the internal electric field created in the PN junction region. As a charge is applied to the diode\'s terminal, a difference in electric potential across both sides of the diode causes electrons to flow from the anode to the cathode. This is known as rectification, and is one of the essential functions of a diode. This process results in a current that is constant in both directions and typically follows the same pattern as the voltage.
In Zener diodes, the junction region is specially designed to allow electrons to travel to the anode rather than the cathode at a pre-determined voltage. This voltage is known as the breakdown voltage and is higher than the normal forward-biased voltage of the junction. When the reverse-biased voltage applied to the diode reaches the breakdown voltage, a large current flows from the cathode to the anode, thus resulting in a small voltage drop at the terminals. This process is known as Zener breakdown.
In addition to the avalanche and Zener breakdowns, the forward-biased current flow also plays an important role in the diode\'s operation. As current passes through the diode, it creates a small voltage drop across its terminals, known as the forward voltage drop. The forward voltage drop is dependent on the amount of current passing through the diode and is generally lower than the breakdown voltage.
The 1N4897A single Zener diode is a versatile and reliable device suitable for a range of protection and voltage-clamping applications. Its low breakdown voltage makes it suitable for use in low-voltage circuits and applications, while its robust nature means that it can cope with extended periods of operation and strong thermal cycling. Its design makes it easy to integrate into circuits and requires only a few external components for its operation.
The specific data is subject to PDF, and the above content is for reference
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